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Integrating Unexpected High Charge-Carrier Mobility and Low-Threshold Lasing Action in an Organic Semiconductor.
Liu, Dan; Wu, Xianxin; Gao, Can; Li, Chenguang; Zheng, Yingshuang; Li, Yang; Xie, Ziyi; Ji, Deyang; Liu, Xinfeng; Zhang, Xiaotao; Li, Liqiang; Peng, Qian; Hu, Wenping; Dong, Huanli.
Affiliation
  • Liu D; National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
  • Wu X; University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Gao C; University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Li C; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
  • Zheng Y; National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
  • Li Y; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Center of Nano Functional Materials and Applications, He
  • Xie Z; Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China.
  • Ji D; Normal College, Shenyang University, Shenyang, 110044, China.
  • Liu X; National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
  • Zhang X; University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Li L; Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China.
  • Peng Q; University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Hu W; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
  • Dong H; Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China.
Angew Chem Int Ed Engl ; 61(25): e202200791, 2022 Jun 20.
Article in En | MEDLINE | ID: mdl-35298062
Integrating high charge-carrier mobility and low-threshold lasing action in an organic semiconductor is crucial for the realization of an electrically pumped laser, but remains a great challenge. Herein, we present an organic semiconductor, named as 2,7-di(2-naphthyl)-9H-fluorene (LD-2), which shows an unexpected high charge-carrier mobility of 2.7 cm2  V-1 s-1 and low-threshold lasing characteristic of 9.43 µJ cm-2 and 9.93 µJ cm-2 and high-quality factor (Q) of 2131 and 1684 at emission peaks of 420 and 443 nm, respectively. Detailed theoretical calculations and photophysical data analysis demonstrate that a large intermolecular transfer integral of 10.36-45.16 meV together with a fast radiative transition rate of 8.0×108  s-1 are responsible for the achievement of the superior integrated optoelectronic properties in the LD-2 crystal. These optoelectronic performances of LD-2 are among the highest reported low-threshold lasing organic semiconductors with efficient charge transport, suggesting its promise for research of electrically pumped organic lasers (EPOLs).
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Angew Chem Int Ed Engl Year: 2022 Type: Article Affiliation country: China

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Angew Chem Int Ed Engl Year: 2022 Type: Article Affiliation country: China