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Giant tunneling magnetoresistance in in-plane double-barrier magnetic tunnel junctions based on MXene Cr2C.
Yu, Hailin; Chen, Mingyan; Shao, Zhenguang; Tao, Yongmei; Jiang, Xuefan; Dong, Yaojun; Zhang, Jie; Yang, Xifeng; Liu, Yushen.
Affiliation
  • Yu H; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
  • Chen M; Hongzhiwei Technology (Shanghai) Co. Ltd., 1599 Xinjinqiao Road, Pudong, Shanghai, China.
  • Shao Z; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
  • Tao Y; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
  • Jiang X; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
  • Dong Y; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
  • Zhang J; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
  • Yang X; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
  • Liu Y; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
Phys Chem Chem Phys ; 25(15): 10991-10997, 2023 Apr 12.
Article in En | MEDLINE | ID: mdl-37016939
ABSTRACT
The discovery of two-dimensional (2D) magnetic materials makes it possible to realize in-plane magnetic tunnel junctions. In this study, the transport characteristics of an in-plane double barrier magnetic tunnel junction (IDB-MTJ) based on Cr2C have been studied by density functional theory combined with the nonequilibrium Green's function method. The results showed its maximum tunneling magnetoresistance ratio (TMR) value reached 6.58 × 1010. Its minimum TMR value (3.86 × 106) was also comparable to those of conventional field effect transistors (FETs). Due to its giant TMR and unique structural characteristics, the IDB-MTJ based on Cr2C has great potential applications in magnetic random access memory (MRAM) and logic computing.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Chem Chem Phys Journal subject: BIOFISICA / QUIMICA Year: 2023 Type: Article Affiliation country: China
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Chem Chem Phys Journal subject: BIOFISICA / QUIMICA Year: 2023 Type: Article Affiliation country: China