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Lasing mode manipulation in a Benz-shaped GaN cavity via the Joule effect of individual Ni wires.
Qin, Feifei; Ji, Xin; Yang, Ying; Li, Meng; Li, Xin; Lin, Yi; Lu, Kerui; Wang, Ru; Wang, Xiaoxuan; Wang, Yongjin; Zhu, Gangyi.
Affiliation
  • Qin F; GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003, People's Republic of China.
  • Ji X; GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003, People's Republic of China.
  • Yang Y; GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003, People's Republic of China.
  • Li M; GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003, People's Republic of China.
  • Li X; GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003, People's Republic of China.
  • Lin Y; Key Lab of Broadband Wireless Communication and Sensor Network Technology (Nanjing University of Posts and Telecommunications, Ministry of Education), People's Republic of China.
  • Lu K; Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huai'an 223003, People's Republic of China.
  • Wang R; GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003, People's Republic of China.
  • Wang X; State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096, People's Republic of China.
  • Wang Y; State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096, People's Republic of China.
  • Zhu G; GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003, People's Republic of China.
Nanotechnology ; 34(28)2023 May 02.
Article in En | MEDLINE | ID: mdl-37019098

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2023 Type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2023 Type: Article