Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-Layer Graphene Transistors.

ABSTRACT

Frequency-selective or even frequency-tunable terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control, and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for the frequency-selective detection of THz radiation. The exploitation of constructive interference of plasma waves in such detectors promises not only frequency selectivity but also a pronounced sensitivity enhancement at target frequencies. However, clear signatures of plasmon-assisted resonances in THz detectors have been revealed only at cryogenic temperatures so far and remain unobserved at application-relevant room-temperature conditions. In this work, we demonstrate the sought-after room-temperature resonant detection of THz radiation in short-channel gated photodetectors made from high-quality single-layer graphene. The survival of this intriguing resonant regime at room temperature ultimately relies on the weak intrinsic electron-phonon scattering in monolayer graphene, which avoids the damping of the plasma oscillations present in the device channel.