Photodetectors Based on MASnI3/MoS2 Hybrid-Dimensional Heterojunction Transistors: Breaking the Responsivity-Speed Trade-Off.

ABSTRACT

Hybrid-dimensional heterojunction transistor (HDHT) photodetectors (PDs) have achieved high responsivities but unfortunately are still with unacceptably slow response speeds. Here, we propose a MASnI3/MoS2 HDHT PD, which exhibits the possibility to obtain high responsivity and fast response simultaneously. By exploring the detailed photoelectric responses utilizing a precise optoelectronic coupling simulation, the electrical performance of the device is optimally manipulated and the underlying physical mechanisms are carefully clarified. Particularly, the influence and modulation characteristics of the trap effects on the carrier dynamics of the PDs are investigated. We find that the localized trap effect in perovskite, especially at its top surface, is primarily responsible for the high responsivity and long response time; moreover, it is normally hard to break such a responsivity-speed trade-off due to the inherent limitation of the trap effect. By synergistically coupling the photogating effect, trap effect, and gate regulation, we indicate that it is possible to achieve an enhancement of the responsivity-bandwidth product by about 3 orders of magnitude. This study facilitates a fine modulation of the responsivity-speed relationship of hybrid-dimensional PDs, enabling breaking the traditional responsivity-speed trade-off of many PDs.