Origin of surface conductivity in diamond
Phys Rev Lett
; 85(16): 3472-5, 2000 Oct 16.
Article
em En
| MEDLINE
| ID: mdl-11030924
ABSTRACT
Hydrogen-terminated diamond exhibits a high surface conductivity (SC) that is commonly attributed to the direct action of hydrogen-related acceptors. We give experimental evidence that hydrogen is only a necessary requirement for SC; exposure to air is also essential. We propose a mechanism in which a redox reaction in an adsorbed water layer provides the electron sink for the subsurface hole accumulation layer. The model explains the experimental findings including the fact that hydrogenated diamond is unique among all semiconductors in this respect.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Tipo de estudo:
Prognostic_studies
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2000
Tipo de documento:
Article
País de afiliação:
Alemanha