Formation of porous GaSb compound nanoparticles by electronic-excitation-induced vacancy clustering.
Phys Rev Lett
; 100(10): 105506, 2008 Mar 14.
Article
em En
| MEDLINE
| ID: mdl-18352206
ABSTRACT
Porous semiconductor compound nanoparticles have been prepared by a new technique utilizing electronic excitation. The porous structures are formed in GaSb particles, when vacancies are efficiently introduced by electronic excitation and the particle size is large enough to confine the vacancy clusters. The capture cross section of the surface layer in particles for the vacancies is smaller than that for the interstitials. Under the condition of supersaturation of vacancies in the particle core, porous structures are produced through the vacancy clusters to a void formation.
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01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2008
Tipo de documento:
Article
País de afiliação:
Japão