Nitrogen interstitial defects in GaAs.
J Phys Condens Matter
; 20(23): 235231, 2008 Jun 11.
Article
em En
| MEDLINE
| ID: mdl-21694322
ABSTRACT
We have studied nitrogen interstitial defects in GaAs with first-principles calculations. On the basis of calculated formation energies we have determined the most common nitrogen defects and the transition levels for various charge states. The lowest energy interstitial-type defects are found to be N-N and N-As split interstitials for most of the experimentally relevant conditions. We have also compared two different methods of obtaining the potential correction needed in an accurate calculation of the formation energies and transition levels.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
J Phys Condens Matter
Assunto da revista:
BIOFISICA
Ano de publicação:
2008
Tipo de documento:
Article
País de afiliação:
Finlândia