Visible and infra-red light emission in boron-doped wurtzite silicon nanowires.
Sci Rep
; 4: 3603, 2014 Jan 08.
Article
em En
| MEDLINE
| ID: mdl-24398782
Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
Sci Rep
Ano de publicação:
2014
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Article