Your browser doesn't support javascript.
loading
Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering.
Ma, J W; Lee, W J; Bae, J M; Jeong, K S; Oh, S H; Kim, J H; Kim, S-H; Seo, J-H; Ahn, J-P; Kim, H; Cho, M-H.
Afiliação
  • Ma JW; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
  • Lee WJ; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
  • Bae JM; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
  • Jeong KS; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
  • Oh SH; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
  • Kim JH; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
  • Kim SH; Nano Analysis Center, KIST , Seoul 130-650, Korea.
  • Seo JH; Nano Analysis Center, KIST , Seoul 130-650, Korea.
  • Ahn JP; Nano Analysis Center, KIST , Seoul 130-650, Korea.
  • Kim H; School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 440-746, Korea.
  • Cho MH; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
Nano Lett ; 15(11): 7204-10, 2015 Nov 11.
Article em En | MEDLINE | ID: mdl-26492109
Palavras-chave
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2015 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2015 Tipo de documento: Article