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Polaron-induced lattice distortion of (In,Ga)As/GaAs quantum dots by optically excited carriers.
Tiemeyer, S; Bombeck, M; Göhring, H; Paulus, M; Sternemann, C; Nase, J; Wirkert, F J; Möller, J; Büning, T; Seeck, O H; Reuter, D; Wieck, A D; Bayer, M; Tolan, M.
Afiliação
  • Tiemeyer S; Fakultät Physik / DELTA, Technische Universität Dortmund, D-44221 Dortmund, Germany.
Nanotechnology ; 27(42): 425702, 2016 Oct 21.
Article em En | MEDLINE | ID: mdl-27622774
ABSTRACT
We report on a high resolution x-ray diffraction study unveiling the effect of carriers optically injected into (In,Ga)As quantum dots on the surrounding GaAs crystal matrix. We find a tetragonal lattice expansion with enhanced elongation along the [001] crystal axis that is superimposed on an isotropic lattice extension. The isotropic contribution arises from excitation induced lattice heating as confirmed by temperature dependent reference studies. The tetragonal expansion on the femtometer scale is tentatively attributed to polaron formation by carriers trapped in the quantum dots.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Alemanha

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Alemanha