Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors.

Xu, Kai; Chen, Dongxue; Yang, Fengyou; Wang, Zhenxing; Yin, Lei; Wang, Feng; Cheng, Ruiqing; Liu, Kaihui; Xiong, Jie; Liu, Qian; He, Jun

Xu, Kai; Chen, Dongxue; Yang, Fengyou; Wang, Zhenxing; Yin, Lei; Wang, Feng; Cheng, Ruiqing; Liu, Kaihui; Xiong, Jie; Liu, Qian; He, Jun.

Afiliação

Xu K; Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchy Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China.
Chen D; University of Chinese Academy of Sciences , Beijing 100080, China.
Yang F; Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchy Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China.
Wang Z; State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, China.
Yin L; Department of Physics, South University of Science and Technology of China , Shenzhen 518005, China.
Wang F; Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchy Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China.
Cheng R; University of Chinese Academy of Sciences , Beijing 100080, China.
Liu K; Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchy Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China.
Xiong J; Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchy Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China.
Liu Q; University of Chinese Academy of Sciences , Beijing 100080, China.
He J; Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchy Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China.

Nano Lett ; 17(2): 1065-1070, 2017 02 08.

Article em En | MEDLINE | ID: mdl-28092953

Palavras-chave

2D materials; Sub-10 nm; field-effect transistors; nanopatterns; very-large-scale integration

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2017 Tipo de documento: Article País de afiliação: China

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