BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor.

Zhang, Haidong; Liu, Hanyu; Wei, Kaya; Kurakevych, Oleksandr O; Le Godec, Yann; Liu, Zhenxian; Martin, Joshua; Guerrette, Michael; Nolas, George S; Strobel, Timothy A

Zhang, Haidong; Liu, Hanyu; Wei, Kaya; Kurakevych, Oleksandr O; Le Godec, Yann; Liu, Zhenxian; Martin, Joshua; Guerrette, Michael; Nolas, George S; Strobel, Timothy A.

Afiliação

Zhang H; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015, USA.
Liu H; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015, USA.
Wei K; Department of Physics, University of South Florida, Tampa, Florida 33620, USA.
Kurakevych OO; IMPMC, UPMC Sorbonne Universités, UMR CNRS 7590, Muséum National d'Histoire Naturelle, IRD UMR 206, F-75005 Paris, France.
Le Godec Y; IMPMC, UPMC Sorbonne Universités, UMR CNRS 7590, Muséum National d'Histoire Naturelle, IRD UMR 206, F-75005 Paris, France.
Liu Z; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015, USA.
Martin J; Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Guerrette M; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015, USA.
Nolas GS; Department of Physics, University of South Florida, Tampa, Florida 33620, USA.
Strobel TA; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015, USA.

Phys Rev Lett ; 118(14): 146601, 2017 Apr 07.

Article em En | MEDLINE | ID: mdl-28430499

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Estados Unidos

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