Enhancement of van der Waals Interlayer Coupling through Polar Janus MoSSe.

Zhang, Kunyan; Guo, Yunfan; Ji, Qingqing; Lu, Ang-Yu; Su, Cong; Wang, Hua; Puretzky, Alexander A; Geohegan, David B; Qian, Xiaofeng; Fang, Shiang; Kaxiras, Efthimios; Kong, Jing; Huang, Shengxi

Zhang, Kunyan; Guo, Yunfan; Ji, Qingqing; Lu, Ang-Yu; Su, Cong; Wang, Hua; Puretzky, Alexander A; Geohegan, David B; Qian, Xiaofeng; Fang, Shiang; Kaxiras, Efthimios; Kong, Jing; Huang, Shengxi.

Afiliação

Zhang K; Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Guo Y; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Ji Q; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Lu AY; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Su C; Department of Nuclear and Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Wang H; Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States.
Puretzky AA; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
Geohegan DB; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
Qian X; Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States.
Fang S; Department of Physics and Astronomy, Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, United States.
Kaxiras E; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States.
Kong J; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
Huang S; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

J Am Chem Soc ; 142(41): 17499-17507, 2020 Oct 14.

Article em En | MEDLINE | ID: mdl-32942848

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Am Chem Soc Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos

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