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Photoluminescence from Single-Walled MoS2 Nanotubes Coaxially Grown on Boron Nitride Nanotubes.
Liu, Ming; Hisama, Kaoru; Zheng, Yongjia; Maruyama, Mina; Seo, Seungju; Anisimov, Anton; Inoue, Taiki; Kauppinen, Esko I; Okada, Susumu; Chiashi, Shohei; Xiang, Rong; Maruyama, Shigeo.
Afiliação
  • Liu M; Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
  • Hisama K; Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
  • Zheng Y; Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
  • Maruyama M; Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan.
  • Seo S; Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
  • Anisimov A; Canatu Ltd., Helsinki FI-00390, Finland.
  • Inoue T; Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
  • Kauppinen EI; Department of Applied Physics, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan.
  • Okada S; Department of Applied Physics, Aalto University School of Science, Espoo 15100, Aalto FI-00076, Finland.
  • Chiashi S; Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan.
  • Xiang R; Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
  • Maruyama S; Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
ACS Nano ; 15(5): 8418-8426, 2021 May 25.
Article em En | MEDLINE | ID: mdl-33881302
Single-walled and multiwalled molybdenum disulfide (MoS2) nanotubes have been coaxially synthesized on small-diameter boron nitride nanotubes (BNNTs) that are obtained from removing single-walled carbon nanotubes (SWCNTs) in heteronanotubes of SWCNTs coated by BNNTs. The photoluminescence (PL) from single-walled MoS2 nanotubes supported by core BNNTs is observed in this work, which evidences the direct bandgap structure of single-walled MoS2 nanotubes with a diameter around 6-7 nm. The observation is consistent with our DFT results that the single-walled MoS2 nanotube changes from an indirect-gap to a direct-gap semiconductor when the diameter of a nanotube is more than around 5.2 nm. On the other hand, when there are SWCNTs inside the heteronanotubes of BNNTs and single-walled MoS2 nanotubes, the PL signal from MoS2 nanotubes is considerably quenched. The charge transfer and energy transfer between SWCNTs and single-walled MoS2 nanotubes were examined through characterizations by PL, X-ray photoelectron spectroscopy, and Raman spectroscopy. Moreover, the PL signal from multiwalled MoS2 nanotubes is significantly quenched. Single-walled and multiwalled MoS2 nanotubes exhibit different Raman features in both resonant and nonresonant Raman spectra.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Japão

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Japão