Valence band engineering of GaAsBi for low noise avalanche photodiodes.

Liu, Yuchen; Yi, Xin; Bailey, Nicholas J; Zhou, Zhize; Rockett, Thomas B O; Lim, Leh W; Tan, Chee H; Richards, Robert D; David, John P R

Liu, Yuchen; Yi, Xin; Bailey, Nicholas J; Zhou, Zhize; Rockett, Thomas B O; Lim, Leh W; Tan, Chee H; Richards, Robert D; David, John P R.

Afiliação

Liu Y; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK.
Yi X; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK.
Bailey NJ; Institute of Photonics and Quantum Sciences, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, UK.
Zhou Z; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK.
Rockett TBO; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK.
Lim LW; State Key Laboratory of CAD&CG, Zhejiang University, Hangzhou, Zhejiang Province, People's Republic of China.
Tan CH; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK.
Richards RD; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK.
David JPR; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK.

Nat Commun ; 12(1): 4784, 2021 Aug 06.

Article em En | MEDLINE | ID: mdl-34362898

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Reino Unido

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