The Lattice Spacing Variability of Intrinsic Float-Zone Silicon.

Kessler, Ernest G; Szabo, Csilla I; Cline, James P; Henins, Albert; Hudson, Lawrence T; Mendenhall, Marcus H; Vaudin, Mark D

Kessler, Ernest G; Szabo, Csilla I; Cline, James P; Henins, Albert; Hudson, Lawrence T; Mendenhall, Marcus H; Vaudin, Mark D.

Afiliação

Kessler EG; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Szabo CI; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Cline JP; Theiss Research, La Jolla, CA 92037, USA.
Henins A; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Hudson LT; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Mendenhall MH; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Vaudin MD; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.

J Res Natl Inst Stand Technol ; 122: 1-25, 2017.

Article em En | MEDLINE | ID: mdl-34877081

Palavras-chave

Standard Reference Material; X-ray diffraction; X-ray spectrometer; lattice parameter; lattice spacing difference; silicon crystal

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Res Natl Inst Stand Technol Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Estados Unidos

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