Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2.

Du, Wanying; Jia, Xionghui; Cheng, Zhixuan; Xu, Wanjing; Li, Yanping; Dai, Lun

Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe₂ and n-MoS₂.

Du, Wanying; Jia, Xionghui; Cheng, Zhixuan; Xu, Wanjing; Li, Yanping; Dai, Lun.

Afiliação

Du W; State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Jia X; Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
Cheng Z; State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Xu W; Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
Li Y; State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Dai L; Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.

iScience ; 24(12): 103491, 2021 Dec 17.

Article em En | MEDLINE | ID: mdl-34917894

Palavras-chave

Devices; Engineering; Nanomaterials

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: IScience Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China

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