Type-II Band Alignment and Tunable Optical Absorption in MoSSe/InS van der Waals Heterostructure.

Yuan, X B; Guo, Y H; Wang, J L; Hu, G C; Ren, J F; Zhao, X W

Yuan, X B; Guo, Y H; Wang, J L; Hu, G C; Ren, J F; Zhao, X W.

Afiliação

Yuan XB; School of Physics and Electronics, Shandong Normal University, Jinan, China.
Guo YH; School of Physics and Electronics, Shandong Normal University, Jinan, China.
Wang JL; School of Physics and Electronics, Shandong Normal University, Jinan, China.
Hu GC; School of Physics and Electronics, Shandong Normal University, Jinan, China.
Ren JF; School of Physics and Electronics, Shandong Normal University, Jinan, China.
Zhao XW; Shandong Provincial Engineering and Technical Center of Light Manipulations and Institute of Materials and Clean Energy, Shandong Normal University, Jinan, China.

Front Chem ; 10: 861838, 2022.

Article em En | MEDLINE | ID: mdl-35273953

Palavras-chave

band edge position; biaxial strain; first principles calculations; optical absorption; van der waals heterostructure

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Front Chem Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

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