Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi<sub>2</sub>Te<sub>4</sub> via Surface Modification.

Liang, Aiji; Chen, Cheng; Zheng, Huijun; Xia, Wei; Huang, Kui; Wei, Liyang; Yang, Haifeng; Chen, Yujie; Zhang, Xin; Xu, Xuguang; Wang, Meixiao; Guo, Yanfeng; Yang, Lexian; Liu, Zhongkai; Chen, Yulin

Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi₂Te₄ via Surface Modification.

Liang, Aiji; Chen, Cheng; Zheng, Huijun; Xia, Wei; Huang, Kui; Wei, Liyang; Yang, Haifeng; Chen, Yujie; Zhang, Xin; Xu, Xuguang; Wang, Meixiao; Guo, Yanfeng; Yang, Lexian; Liu, Zhongkai; Chen, Yulin.

Afiliação

Liang A; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Chen C; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China.
Zheng H; Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, U.K.
Xia W; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Huang K; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Wei L; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China.
Yang H; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Chen Y; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Zhang X; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Xu X; State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
Wang M; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Guo Y; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Yang L; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China.
Liu Z; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Chen Y; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China.

Nano Lett ; 22(11): 4307-4314, 2022 Jun 08.

Article em En | MEDLINE | ID: mdl-35604392

Palavras-chave

ARPES; MnBi2Te4; magnetic topological insulator; potassium dosing; topological surface state

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

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