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Intrinsic ferroelectricity in Y-doped HfO2 thin films.
Yun, Yu; Buragohain, Pratyush; Li, Ming; Ahmadi, Zahra; Zhang, Yizhi; Li, Xin; Wang, Haohan; Li, Jing; Lu, Ping; Tao, Lingling; Wang, Haiyan; Shield, Jeffrey E; Tsymbal, Evgeny Y; Gruverman, Alexei; Xu, Xiaoshan.
Afiliação
  • Yun Y; Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA.
  • Buragohain P; Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA.
  • Li M; Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA.
  • Ahmadi Z; Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, USA.
  • Zhang Y; School of Materials Engineering, Purdue University, West Lafayette, IN, USA.
  • Li X; Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA.
  • Wang H; Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA.
  • Li J; Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA.
  • Lu P; Sandia National Laboratories, Albuquerque, NM, USA.
  • Tao L; Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA.
  • Wang H; School of Materials Engineering, Purdue University, West Lafayette, IN, USA.
  • Shield JE; Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, USA.
  • Tsymbal EY; Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, USA.
  • Gruverman A; Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, USA. tsymbal@unl.edu.
  • Xu X; Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, USA. tsymbal@unl.edu.
Nat Mater ; 21(8): 903-909, 2022 Aug.
Article em En | MEDLINE | ID: mdl-35761058
ABSTRACT
Ferroelectric HfO2-based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology. Earlier work indicated that a nanometre grain size was crucial for the stabilization of the ferroelectric phase. This constraint, associated with a high density of structural defects, obscures an insight into the intrinsic ferroelectricity of HfO2-based materials. Here we demonstrate that stable and enhanced polarization can be achieved in epitaxial HfO2 films with a high degree of structural order (crystallinity). An out-of-plane polarization value of 50 µC cm-2 has been observed at room temperature in Y-doped HfO2(111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 µC cm-2, which is in close agreement with density functional theory calculations. The crystal structure of films reveals the Pca21 orthorhombic phase with small rhombohedral distortion, underlining the role of the structural constraint in stabilizing the ferroelectric phase. Our results suggest that it could be possible to exploit the intrinsic ferroelectricity of HfO2-based materials, optimizing their performance in device applications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Mater Assunto da revista: CIENCIA / QUIMICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Mater Assunto da revista: CIENCIA / QUIMICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos