Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics.
Nano Lett
; 22(18): 7667-7673, 2022 Sep 28.
Article
em En
| MEDLINE
| ID: mdl-36083833
ABSTRACT
Two-dimensional semiconducting transition metal dichalcogenides (TMDs) enable ultimate channel length scaling of transistor technology due to their atomic-thin body nature, which also brings the challenge of a pronounced self-heating effect inside the ultrathin channel. In particular, high current density under high electric field could lead to negative differential resistance behavior due to self-heating, not only limiting the current carrying capability of the TMDs transistors but also leading to severe reliability issues. Here, we report high-performance monolayer WS2 transistors on a high-thermal-conductivity BeO dielectric with effective suppression of the self-heating effects, eliminating the negative differential resistance behavior at high field, as observed in the case of the HfO2 dielectric. The monolayer CVD WS2 device on BeO with a 50 nm channel length exhibits a record-high on-state current of 325 µA/µm, transconductance (gm) of 150 µS/µm, and a on/off ratio of 1.8 × 108 at Vds = 1 V, far exceeding previous results.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2022
Tipo de documento:
Article
País de afiliação:
China