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Dual-Gate All-Electrical Valleytronic Transistors.
Lai, Shen; Zhang, Zhaowei; Wang, Naizhou; Rasmita, Abdullah; Deng, Ya; Liu, Zheng; Gao, Wei-Bo.
Afiliação
  • Lai S; Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, People's Republic of China.
  • Zhang Z; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
  • Wang N; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
  • Rasmita A; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
  • Deng Y; School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
  • Liu Z; School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
  • Gao WB; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
Nano Lett ; 23(1): 192-197, 2023 Jan 11.
Article em En | MEDLINE | ID: mdl-36594477
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article