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Thousands of conductance levels in memristors integrated on CMOS.
Rao, Mingyi; Tang, Hao; Wu, Jiangbin; Song, Wenhao; Zhang, Max; Yin, Wenbo; Zhuo, Ye; Kiani, Fatemeh; Chen, Benjamin; Jiang, Xiangqi; Liu, Hefei; Chen, Hung-Yu; Midya, Rivu; Ye, Fan; Jiang, Hao; Wang, Zhongrui; Wu, Mingche; Hu, Miao; Wang, Han; Xia, Qiangfei; Ge, Ning; Li, Ju; Yang, J Joshua.
Afiliação
  • Rao M; TetraMem, Fremont, CA, USA.
  • Tang H; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.
  • Wu J; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Song W; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.
  • Zhang M; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.
  • Yin W; TetraMem, Fremont, CA, USA.
  • Zhuo Y; TetraMem, Fremont, CA, USA.
  • Kiani F; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.
  • Chen B; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.
  • Jiang X; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.
  • Liu H; TetraMem, Fremont, CA, USA.
  • Chen HY; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.
  • Midya R; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.
  • Ye F; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.
  • Jiang H; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.
  • Wang Z; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.
  • Wu M; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.
  • Hu M; TetraMem, Fremont, CA, USA.
  • Wang H; TetraMem, Fremont, CA, USA.
  • Xia Q; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.
  • Ge N; TetraMem, Fremont, CA, USA.
  • Li J; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.
  • Yang JJ; TetraMem, Fremont, CA, USA.
Nature ; 615(7954): 823-829, 2023 03.
Article em En | MEDLINE | ID: mdl-36991190
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Guideline / Prognostic_studies Idioma: En Revista: Nature Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Guideline / Prognostic_studies Idioma: En Revista: Nature Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos