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ThCr2Si2C: An Antiferromagnetic Metal with a Cr2C Square Lattice.
Xiao, Yusen; Li, Baizhuo; Duan, Qingchen; Liu, Shaohua; Ren, Qingyong; Lin, Yiqiang; Xia, Yuanhua; Cui, YanWei; Jiang, Hao; Wei, Shuli; Ren, Zhi; Mei, Yuxue; Sun, Yuping; Fu, Shenggui; Tan, Shugang; Jing, Qiang; Yu, Dan; Chen, Yongliang; Wang, Cao; Cao, Guanghan.
Afiliação
  • Xiao Y; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Li B; Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu 610031, China.
  • Duan Q; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Liu S; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Ren Q; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Lin Y; Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China.
  • Xia Y; Spallation Neutron Source Science Center, Dongguan 523803, China.
  • Cui Y; Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Devices, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
  • Jiang H; Key Laboratory of Neutron Physics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621999, P. R. China.
  • Wei S; School of Science, Westlake University, Hangzhou 310064, China.
  • Ren Z; School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, P. R. China.
  • Mei Y; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Sun Y; School of Science, Westlake University, Hangzhou 310064, China.
  • Fu S; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Tan S; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Jing Q; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Yu D; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Chen Y; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Wang C; School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, P. R. China.
  • Cao G; Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu 610031, China.
Inorg Chem ; 63(1): 211-218, 2024 Jan 08.
Article em En | MEDLINE | ID: mdl-38153326
ABSTRACT
A quaternary compound, ThCr2Si2C, was synthesized by using the arc-melting technique. The compound adopts a tetragonal CeCr2Si2C-type crystal structure. The electronic resistivity and specific heat data exhibit metallic behavior, while the magnetic susceptibility displays a pronounced broad peak at around 370 K, indicating the antiferromagnetic phase transition. The first-principles calculations suggest A-type antiferromagnetic ordering of the Cr sublattice, which is confirmed by neutron diffraction experiments. By comparing the crystal structure of ThCr2Si2C with the isostructural Cr-based compounds, the magnetic state of Cr 3d orbital is discussed in terms of the band-filling effects and indirect spin exchange interaction.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Inorg Chem Ano de publicação: 2024 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Inorg Chem Ano de publicação: 2024 Tipo de documento: Article