Thermal Equation of State of Cubic Silicon Carbide at High Pressures.
Chemphyschem
; 25(9): e202300604, 2024 May 02.
Article
em En
| MEDLINE
| ID: mdl-38426668
ABSTRACT
We have performed inâ
situ X-ray diffraction measurements of cubic silicon carbide (SiC) with a zinc-blende crystal structure (B3) at high pressures and temperatures using multi-anvil apparatus. The ambient volume inferred from the compression curves is smaller than that of the starting material. Using the 3rd-order Birch-Murnaghan equation of state and the Mie-Grüneisen-Debye model, we have determined the thermoelastic parameters of the B3-SiC to be K0=228±3â
GPa, K0',=4.4±0.4, q=0.27±0.37, where K0, K0' and q are the isothermal bulk modulus, its pressure derivative and logarithmic volume dependence of the Grüneisen parameter, respectively. Using the 3rd-order Birch-Murnaghan EOS with the thermal expansion coefficient, the thermoelastic parameters have been found as K0=221±3â
GPa, K0',=5.2±0.4, α0=0.90±0.02 â
10-5 â
K-1, where α0 is the thermal expansion coefficient at room pressure and temperature. We have determined that paired B3-SiC - MgO calibrants can be used to estimate pressure and temperature simultaneously in ultrahigh-pressure experiments up to 60â
GPa.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
Chemphyschem
Assunto da revista:
BIOFISICA
/
QUIMICA
Ano de publicação:
2024
Tipo de documento:
Article