Nondefective Vacancy Enhanced Resistive Switching Reliability in Emergent van der Waals Metal Phosphorus Trisulfide-Based Memristive In-Memory Computing Hardware.

Li, Yesheng; Xiong, Yao; Zhai, Baoxing; Yin, Lei; Yu, Yiling; Wang, Hao; He, Jun

Li, Yesheng; Xiong, Yao; Zhai, Baoxing; Yin, Lei; Yu, Yiling; Wang, Hao; He, Jun.

Afiliação

Li Y; Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan 430072, China.
Xiong Y; Suzhou Institute of Wuhan University, Suzhou 215123, China.
Zhai B; School of Science, Wuhan University of Technology, Wuhan 430070, China.
Yin L; Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou 450046, China.
Yu Y; Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan 430072, China.
Wang H; Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan 430072, China.
He J; Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan 430072, China.

Nano Lett ; 24(26): 7843-7851, 2024 Jul 03.

Article em En | MEDLINE | ID: mdl-38912682

Palavras-chave

in-memory computing; memristor; metal phosphorus trisulfides; migration structure variation; nondefective vacancy; vacancy-type-induced memristive discrepancy

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China

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