RESUMEN
Heterogeneous integration of micro-electro mechanical systems (MEMS) and complementary metal oxide semiconductor (CMOS) integrated circuits (ICs) by 3D stacking or wafer bonding is an emerging approach to advance the functionality of microdevices. Aluminum (Al) has been of interest as one of the wafer bonding materials due to its low cost and compatibility with CMOS processes. However, Al wafer bonding typically requires a high temperature of 450 °C or more due to the stable native oxide which presents on the Al surface. In this study, a wafer bonding technique for heterogeneous integration using electroplated Al bonding frame is demonstrated. The bonding mechanism relies on the mechanical deformation of the electroplated Al bonding frame through a localized bonding pressure by the groove structures on the counter wafer, i.e., press marking. The native oxide on the surface was removed and a fresh Al surface at the bonding interface was released through such a large mechanical deformation. The wafer bonding was demonstrated at the bonding temperatures of 250-450 °C. The influence of the bonding temperature to the quality of the bonded substrates was investigated. The bonding shear strength of 8-100 MPa was obtained, which is comparable with the other Al bonding techniques requiring high bonding temperature.
RESUMEN
A tube-integrated flow sensor is proposed in this study by integrating a micro-electro mechanical systems (MEMS) flow-sensing element and electrical wiring structure on the same copper on polyimide (COP) substrate. The substrate was rolled into a circular tube with the flow-sensing element installed at the center of the tube. The signal lines were simultaneously formed and connected to the Cu layer of the substrate during the fabrication of the sensing structure, thus simplifying the electrical connection process. Finally, by rolling the fabricated sensor substrate, the flow sensor device itself was transformed into a circular tube structure, which defined the airflow region. By implementing several slits on the substrate, the sensing element was successfully placed at the center of the tube where the flow velocity is maximum. Compared to the conventional sensor structure in which the sensor was placed on the inner wall surface of the tube, the sensitivity of the sensor was doubled.
RESUMEN
Electroplating process is being used to deposit a relatively thick film of metallic materials for various microsystems applications, such as for the wafer-level bonding sealing frame and as a thermal actuator. Recently, the Al electroplating process from ionic liquid has been an attractive deposition method for anti-corrosion coatings. To extend the utilization of the film, in particular for microsystems application, a microstructure formation by patterned electroplating of Al from AlCl 3 â»1-ethyl-3-methylimidazolium chloride ((EMIm)Cl) ionic liquid is investigated in this study. The influences of each deposition parameters to the electroplating process as well as the resulting surface morphology are evaluated. Electroplated Al deposits on both Au and Al seed layers are both studied. It is also found that a recurrent galvanic pulse plating process yields in a higher current efficiency. Finally, Al electroplating on a 2 µm-trenched 100 mm-wafer is also demonstrated.