RESUMEN
The characteristics of ITO/Eu2O3/ITO/PET transparent and flexible resistive switching memory are studied. The device exhibits superior characteristics such as device area-independent and forming-free resistive switching behavior with a resistance on/off ratio of 104, good retention of >104 s and high AC endurance of >107 cycles. The conduction mechanism of the high-resistance state is the Poole-Frenkel mechanism, while that of the low-resistance state is ohmic conduction. The electrical characteristics of the flexible device have shown excellent results up to 5 mm bending radius, at which a degradation in the on/off ratio of the memory window is observed, due to the change in the dielectric layer resistance. The resistive switching characteristics can be improved during bending up to the radius of 2 mm by the incorporation of an aluminum-doped zinc oxide layer in the device as the bottom electrode, proving its application in future flexible and transparent memory devices.
RESUMEN
Photo-physical processes in Er-doped silica glass matrix containing Ge nanocrystals prepared by the sol-gel method are presented in this article. Strong photoluminescence at 1.54 µm, important for fiber optics telecommunication systems, is observed from the different sol-gel derived glasses at room temperature. We demonstrate that Ge nanocrystals act as strong sensitizers for Er(3+) ions emission and the effective Er excitation cross section increases by almost four orders of magnitude with respect to the one without Ge nanocrystals. Rate equations are considered to demonstrate the sensitization of erbium luminescence by Ge nanocrystals. Analyzing the erbium effective excitation cross section, extracted from the flux dependent rise and decay times, a Dexter type of short range energy transfer from a Ge nanocrystal to erbium ion is established.
RESUMEN
Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance-voltage and conductance-voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si(1-x)Ge(x) quantum dots show better memory characteristics than single-layer Si quantum dots.
