A metamaterial is an artificial material designed to control the electric permittivity and magnetic permeability freely beyond naturally existing values. A promising application is a slow-light device realized using a combination of optical waveguides and metamaterials. This paper proposes a method to dynamically control the slow-light effect in a metamaterial-loaded Si waveguide. In this method, the slow-light effect (i.e., group index) is controlled by changing the phase of the control light incident on the device from a direction opposite to that of the signal light. The group index of the device could be continuously controlled from 63.6 to 4.2 at a wavelength of 1.55â µm.
Infrared refractive index is an indispensable parameter for various fields including infrared photonics. To date, critical-angle refractometers, V-block refractometers, and spectroscopic ellipsometry have been commonly used to measure the refractive index. Although every method has an accuracy of four decimal places for the refractive index, a measurable wavelength region is limited up to about 2 µm. In this study, we demonstrated a metamaterial infrared refractometer for determining broadband complex refractive index. Using the device, a broadband (40-120 THz; wavelength 2.5-7.5â µm) and high-precision(< 5 ×10-3) complex refractive index of polymethyl methacrylate was measured for the first time.
We demonstrated a novel slow-light Si-wire waveguide combined with metamaterials, which can be easily integrated with other Si photonics devices. The slow-light effect can be produced simply by placing metamaterials at an appropriate position on a Si-wire waveguide. It was confirmed that the large group index of more than 40 could be obtained because of a steep and discontinuous change of dispersion relation near the resonance frequency of metamaterials.
We report the first demonstration of direct modulation of InAs/GaAs quantum dot (QD) lasers grown on on-axis (001) Si substrate. A low threading dislocation density GaAs buffer layer enables us to grow a high quality 5-layered QD active region on on-axis Si substrate. The active layer has p-modulation doped GaAs barrier layers with a hole concentration of 5 × 1017 cm-3to suppress gain saturation. Small-signal measurement on a 3 × 580 µm2 Fabry-Perot laser showed a 3dB bandwidth of 6.5 GHz at a bias current of 116 mA. A 12.5 Gbit/s non-return-to-zero signal modulation was achieved by directly probing the chip. Open eyes with an extinction ration of 3.3dB was observed at room temperature. The bit-error-rate (BER) curve showed no error-floor up to BER of 1 × 10-13. 12 km single-mode fiber transmission experiments using the QD laser on Si showed a low power penalty of 1 dB at 5Gbit/s. These results demonstrate the potential for QD lasers epitaxially grown on Si to be used as a low-cost light source for optical communication systems.
We demonstrate a silicon Mach-Zehnder modulator (MZM) based on hydrogenated amorphous silicon (a-Si:H) strip-loaded waveguides on a silicon on insulator (SOI) platform, which can be fabricated by using a complementary metal-oxide semiconductor (CMOS) compatible process without half etching of the SOI layer. Constructing a vertical p-n junction in a flat etchless SOI layer provides superior controllability and uniformity of carrier profiles. Moreover, the waveguide structure based on a thin a-Si:H strip line can be fabricated easily and precisely. Thanks to a large overlap between the depletion region and optical field in the SOI layer with a vertical p-n junction, the MZM provides 0.80- to 1.86-Vcm modulation efficiency and a 12.1- to 16.9-dBV loss-efficiency product, besides guaranteeing a 3-dB bandwidth of about 17 GHz and 28-Gbps high-speed operation. The αVπL is considerably lower than that of conventional high-speed modulators.
Toward the realization of ultralow-power-consumption on-chip optical interconnection, two types of membrane-based GaInAs/InP p-i-n photodiodes were fabricated on Si host substrates by using benzocyclobutene bonding. A responsivity of 0.95 A/W was estimated with a conventional waveguide-type photodiode with an â¼30-µm-long absorption region. The fitting curves based on the experimental data indicated that an absorption efficiency above 90% could be achieved with a length of 10 µm. In addition, increased absorption per length of a photonic crystal waveguide-type photodiode was obtained because of the enhanced lateral optical confinement or the slow-light effect, enabling a further reduction in the device length.
We propose the concept of organic membrane photonic integrated circuits (OMPICs), which incorporate various functions needed for optical signal processing into a flexible organic membrane. We describe the structure of several devices used within the proposed OMPICs (e.g., transmission lines, I/O couplers, phase shifters, photodetectors, modulators), and theoretically investigate their characteristics. We then present a method of fabricating the photonic devices monolithically in an organic membrane and demonstrate the operation of transmission lines and I/O couplers, the most basic elements of OMPICs.
We show the feasibility of controlling the magnetic permeability of optical semiconductor devices on InP-based photonic integration platforms. We have achieved the permeability control of GaInAsP/InP semiconductor waveguides by combining the waveguide with a metamaterial consisting of gate-controlled split ring resonators. The split-ring resonators interact magnetically with light travelling in the waveguide and move the effective relative permeability of the waveguide away from 1 at optical frequencies. The variation in permeability can be controlled with the gate voltage. Using this variable-permeability waveguide, we have built an optical modulator consisting of a GaInAsP/InP Mach-Zehnder interferometer for use at an optical communication wavelength of 1.55 µm. The device changes the permeability of its waveguide arm with controlling gate voltage, thereby varying the refractive index of the arm to modulate the intensity of light. For the study of variable-permeability waveguide devices, we also propose a method of extracting separately the permittivity and permeability values of devices from the experimental data of light transmission. Adjusting the permeability of optical semiconductors to the needs of device designers will open the promising field of 'permeability engineering'. Permeability engineering will facilitate the manipulation of light and the management of photons, thereby contributing to the development of novel devices with sophisticated functions for photonic integration.
We analyzed two types of Mach-Zehnder plasmonic modulators on a silicon-on-insulator platform with a different furan-thiophene chromophore electro-optic polymer to compare to other reports. The metal-taper coupling structure and the metal-insulator-metal cross section in our design have been optimized based on the new material parameters. According to the simulation result, a modulator with a slot width of 50 nm and an on-off voltage of Vπ=20 V can be 21 µm long, leading to a total modulator loss of 15 dB, which is comparable to previously reported devices.
We fabricated a magneto-optical (MO) isolator with a TE mode nonreciprocal phase shift. The isolator is based on a Mach-Zehnder interferometer composed of 3-dB directional couplers, a reciprocal phase shifter, and a nonreciprocal phase shifter. To realize TE mode operation in the optical isolator, we designed a novel waveguide structure composed of a hydrogenated amorphous silicon waveguide with an asymmetric MO garnet lateral clad on a garnet substrate. The isolator operation is successfully demonstrated in a fabricated device showing the different transmittances between forward and backward directions. The maximum isolation of the fabricated isolator is 17.9 dB at a wavelength of 1561 nm for the TE mode.
Low-power consumption directly-modulated lasers are a key device for on-chip optical interconnection. We fabricated a GaInAsP/InP membrane DFB laser that exhibited a low-threshold current of 0.21 mA and single-mode operation with a sub-mode suppression ratio of 47 dB at a bias current of 2 mA. A high modulation efficiency of 11 GHz/mA1/2 was obtained. A 10 Gbit/s direct modulation using a non-return-to-zero 231-1 pseudo-random bit sequence signal was performed with a bias current of 1 mA, which is the lowest bias current ever reported for direct modulation of a DFB laser. A bit-error rate of 10-9 was successfully achieved.
The direct modulation characteristics of a membrane distributed feedback (DFB) laser on a silicon substrate were investigated. Enhancement of the optical confinement factor in the membrane structure facilitates the fabrication of a strongly index-coupled (κ(I) = 1500 cm(-1)) DFB laser with the cavity length of 80 µm and a threshold current of 270 µA. Small-signal modulation measurements yielded a -3dB bandwidth of 9.5 GHz at 1.03-mA bias current, with modulation efficiency of 9.9 GHz/mA(1/2), which is, to the best of our knowledge, the highest value among those reported for DFB lasers.
Photonic wire bonding (PWB) was used to achieve flexible chip-scale optical interconnection as a kind of 3D-freeform polymer waveguide based on the two-photon polymerization of SU-8. First, the fabrication conditions of PWB were determined for the two-photon absorption process, and the coupling structure between PWB and III-V optical components was numerically simulated in order to obtain high coupling efficiency. Then, using PWB, chip-to-chip optical transmission was realized between laser and detector chips located on a common Si substrate. We fabricated a 2.5-µm-wide PWB with 1:3 aspect ratio between two optical chips of 140-µm gap and achieved a connection loss of approximately 10 dB.
We fabricated GaInAsP/InP waveguide-integrated lateral-current-injection (LCI) membrane distributed feedback (DFB) lasers on a Si substrate by using benzocyclobutene (BCB) adhesive bonding for on-chip optical interconnection. The integration ofa butt-jointed built-in (BJB) GaInAsP passive waveguide was performed by organometallic vapor-phase epitaxy (OMVPE).By introducing a strongly index-coupled DFB structure with a 50-µm-long cavity, a threshold current of 230 µA was achieved for a stripe width of 0.8 µm under room-temperature continuous-wave (RT-CW) conditions. The maximum output power of 32 µW was obtained. The lasing wavelength and submode suppression ratio (SMSR) were 1534 nm and 28 dB, respectively, at a bias current of 1.2 mA.
Metamaterials are artificially structured materials that can produce innovative optical functionalities such as negative refractive index, invisibility cloaking, and super-resolution imaging. Combining metamaterials with semiconductors enables us to develop novel optoelectronic devices based on the new concept of operation. Here we report the first experimental demonstration of a permeability-controlled waveguide optical modulator consisting of an InGaAsP/InP Mach-Zehnder interferometer with 'tri-gate' metamaterial attached on its arms. The tri-gate metamaterial consists of metal resonator arrays and triple-gate field effect elements. It changes its permeability with a change in the controlling gate voltage, thereby changing the refractive index of the interferometer arm to switch the modulator with an extinction ratio of 6.9 dB at a wavelength of 1.55 µm. The result shows the feasibility of InP-based photonic integrated devices that can produce new functions by controlling their permeability as well as their permittivity.
With the goal of creating magneto-optical devices, we demonstrated forming nanostructures inside a substrate of cerium-substituted yttrium iron garnet (Ce:YIG) by means of direct laser writing. Laser irradiation changed both the optical and magnetic properties of Ce:YIG. The measurements showed that the refractive index was increased by 0.015 (about 0.7% change) and the magnetization property was changed from hard to soft to decrease the coercivity. This technology enables the formation of 3-dimensional optical and magnetic nanostructures in YIG and will contribute to the development of novel devices for optical communication and photonic integration.
For silicon wire based ring resonator biosensors, we investigate the simultaneous retrieval of changes in the fluidic refractive index ∆n(c) and surface adsorbed molecular film thickness ∆d(F). This can be achieved by monitoring the resonance shifts of the sensors operating in the TE and TM polarizations at the same time. Although this procedure is straightforward in principle, significant retrieval errors can be introduced due to deviations in the sensor waveguide cross-sections from their nominal values in the range commonly encountered for silicon photonic wire devices. We propose a method of determining the fabricated waveguide size using the group indices derived from measured free spectral range (FSR) of the resonators. We further demonstrate that using experimentally measured group index values, the waveguide size can be determined to accuracies of ± 2 nm in width and ± 1 nm in height. By using this procedure, ∆n(c) and ∆d(F) can be obtained to a precision of within 10% of the true values using optically measurable parameters, improving the retrieval accuracy by more than 3 times.
Biosensing Techniques/instrumentation , Optical Devices , Photons , Refractometry/instrumentation , Silicon , Transducers , Equipment Design , Humans
An InP-based Mach-Zehnder interferometer combined with a metamaterial layer consisting of a split-ring resonator array was constructed to measure the complex permeability of the metamaterial. At a wavelength of 1.5 µm, the metamaterial showed non-unity relative permeability induced by magnetic interaction with propagating light in the device. This method of measurement would be useful to determine constitutive parameters in such waveguide-based photonic devices, allowing us to design photonic integrated circuits that make use of metamaterials.
Room-temperature pulsed operation of a 1.3-µm wavelength transistor laser (TL), consisting of a buried heterostructure (BH) with an npn configuration and an AlGaInAs/InP multiple-quantum-well (MQW) active region, was successfully attained. A threshold base current of 18 mA (threshold emitter current of 150 mA) was obtained with a stripe width of 1.3 µm and a cavity length of 500 µm. The transistor activity as well as the lasing operation were achieved at the same time, which is essential for the high-speed operation of TLs.
We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-µm stripe width and 300-µm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.
Arsenicals/chemistry , Gallium/chemistry , Indium/chemistry , Lasers , Membranes, Artificial , Phosphines/chemistry , Refractometry/instrumentation , Silicon/chemistry , Equipment Design , Equipment Failure Analysis , Feedback
