Planar array antenna coupled InGaAs/InAlAs multi-quantum well optical modulator for 60†GHz band millimeter wave signals.

A Fe-InP-based planar array antenna-coupled InGaAs/InAlAs multiple quantum well (MQW) optical phase modulator is proposed and demonstrated for radio over fiber (RoF) applications with 60 GHz-band millimeter-wave wireless signals. The modulator comprises five types of five-layer asymmetric coupled quantum wells (FACQWs) and a two-element array antenna. The FACQWs are designed to have a significant electric-field-induced refractive index change with small electric fields induced in the antenna. In the fabricated modulator, a carrier-to-sideband ratio (CSR) of up to 45.9 dB was successfully obtained at a power density of 11 W/m2, corresponding to a phase shift of 10.1 mrad. Furthermore, data transmission of a 2 GHz modulated wave with a 60 GHz wireless carrier wave was demonstrated.

Silicon Microring Resonator Biosensor for Detection of Nucleocapsid Protein of SARS-CoV-2.

A high-sensitivity silicon microring (Si MRR) optical biosensor for detecting the nucleocapsid protein of SARS-CoV-2 is proposed and demonstrated. In the proposed biosensor, the surface of a Si MRR waveguide is modified with antibodies, and the target protein is detected by measuring a resonant wavelength shift of the MRR caused by the selective adsorption of the protein to the surface of the waveguide. A Si MRR is fabricated on a silicon-on-insulator substrate using a CMOS-compatible fabrication process. The quality factor of the MRR is approximately 20,000. The resonant wavelength shift of the MRR and the detection limit for the environmental refractive index change are evaluated to be 89 nm/refractive index unit (RIU) and 10-4 RIU, respectively. The sensing characteristics are examined using a polydimethylsiloxane flow channel after the surface of the Si MRR waveguide is modified with the IgG antibodies through the Si-tagged protein. First, the selective detection of the protein by the MRR sensor is experimentally demonstrated by the detection of bovine serum albumin and human serum albumin. Next, various concentrations of nucleocapsid protein solutions are measured by the MRR, in which the waveguide surface is modified with the IgG antibodies through the Si-tagged protein. Although the experimental results are very preliminary, they show that the proposed sensor has a potential nucleocapsid sensitivity in the order of 10 pg/mL, which is comparable to the sensitivity of current antigen tests. The detection time is less than 10 min, which is much shorter than those of other antigen tests.

Improvement and stabilization of optical hydrogen sensing ability of Au-Pd alloys.

Formation of metal hydrides is a signature chemical property of hydrogen and it can be leveraged to enact both storage and detection of this technologically important yet extremely volatile gas. Palladium shows particular promise as a hydrogen storage medium as well as a platform for creating rapid and reliable H2 optical sensor devices. Furthermore, alloying Pd with other noble metals provides a technologically simple yet powerful way of enacting control over the structural and catalytic properties of the resultant material. Similarly, in addition to alloying, different top-down and bottom-up Pd nanostructuring methods have been proposed and investigated specifically for creating optical H2 sensors. In this work it was determined that the hydrogen sensing ability of a series of Pd-Au alloy films could be improved by way of a hydrogen over exposure (HOE) treatment. Structural investigation showed that the HOE treatment, in addition to irreversibly altering the film morphology, results in a 1 to 2% expansion in the lattice constant of the metal. By combining a cyclic HOE treatment and alloy aging through annealing, the hydrogen detection sensitivity and response rates of Pd-Au films could be stabilized so that their performance would no longer be appreciably affected by repeated hydrogen uptake and release cycles. This work takes a further step towards routine all-optical detection of part-per-million level hydrogen gas concentrations in Pd-Au alloy films and discussion of ways to enhance response rates is provided.

InGaAs/InAlAs multiple-quantum-well optical modulator integrated with a planar antenna for a millimeter-wave radio-over-fiber system.

An InGaAs/InAlAs multiple-quantum-well (MQW) optical phase modulator integrated with a planar antenna for a millimeter-wave (MMW) radio-over-fiber (RoF) system is fabricated, and its high-speed modulation under irradiation of MMW signals is experimentally demonstrated. The modulator exhibits a carrier-to-sideband ratio (CSR) of 62.7 dB, corresponding to a phase shift Δϕ of 1.46 mrad under irradiation of MMW signals with an RF power density P of ∼77 W/m2 at a frequency of 57.5 GHz. The modulator is operated over the C band in optical communications. The modulation operation was attributed to the large change in refractive index caused by the quantum-confined Stark effect in the MQW. This is the first case where the refractive index change of a semiconductor was used as an antenna-coupled optical modulator.

Characteristics of Highly Sensitive Hydrogen Sensor Based on Pt-WO3/Si Microring Resonator.

Hydrogen gas has attracted attention as a new energy carrier, and simple but highly sensitive hydrogen sensors are required. We fabricated an optical hydrogen sensor based on a silicon microring resonator (MRR) with tungsten oxide (WO3) using a complementary metal-oxide-semiconductor (CMOS)-compatible process for the MRR and a sol-gel method for the WO3 layer and investigated its sensing characteristics at device temperatures of 5, 20, and 30 °C. At each temperature, a hydrogen concentration of as low as 0.1 vol% was successfully detected. The gas sensitivity increased with decreasing temperature. The dependence of the sensitivity on the device temperature can be attributed to the thickness of tungsten bronze (HxWO3) formed by WO3 during exposure to hydrogen gas. In addition, a hydrogen gas sensor based on a silicon-MRR-enhanced Mach-Zehnder interferometer (MRR-MZI) is proposed and its significantly high sensing ability using improved changes in the transmittance of light is theoretically discussed.

Metamaterial for Hydrogen Sensing.

A hydrogen sensor based on plasmonic metasurfaces is demonstrated to exhibit the industry-required 10 s reaction time and sensitivity. It consists of a layer of either Y or WO3 sandwiched between a top Pd nanodisk and a Au mirror at the base. The phase change layer (Y, WO3) reacts with hydrogen, and the corresponding change of the refractive index (permittivity) is detected by the spectral shift of the resonance dip in reflectance at the IR spectral window. This direct reflectance readout of the permittivity change due to hydrogen uptake is fast and is facilitated by radiation field enhancement extending into the phase change volume. Numerical modeling was used to elucidate the effects that real and imaginary parts of the refractive index exert on the spectral shifts of resonance. The mechanism of sensor performance is outlined, and a possibility to tune its spectral range of operation by the diameter of the Pd nanodisk and thickness of the phase change material makes this design applicable to other molecular detection applications including surface-enhanced IR absorption.

Hitless wavelength-selective switch with quadruple series-coupled microring resonators using multiple-quantum-well waveguides.

We demonstrate a hitless wavelength-selective switch (WSS) based on InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) quadruple series-coupled microring resonators. The WSS is driven by the electric-field-induced change in refractive index in the FACQW core layer caused by the quantum-confined Stark effect (QCSE) for high-speed operation. The WSS with high-mesa waveguides is fabricated on a molecular beam epitaxy-grown wafer by dry etching. The fabricated WSS consists of four microrings, each with a round-trip length of 350 µm and five directional couplers with shallow grooves. A boxlike spectral response and hitless switching with higher extinction ratios than a double series-coupled microring resonator are successfully demonstrated. In addition, we propose the improvement of switching characteristics by controlling the coupling efficiencies at the directional couplers.

Low-voltage quantum well microring-enhanced Mach-Zehnder modulator.

Modulation characteristics of a novel InGaAs/InAlAs multiple quantum well (MQW) microring-enhanced Mach-Zehnder modulator (MRE-MZM) is investigated in detail and its low-voltage operation with high extinction ratio is demonstrated. The MZM has a single microring resonator in one arm and is driven by the change in electrorefractive index induced by the quantum-confined Stark effect in the MQW core layer. As the MQW, a multiple five-layer asymmetric coupled quantum well (FACQW) is used to obtain a large electrorefractive index change. The driving voltage of the proposed MZM is significantly reduced owing to the enhanced phase shift in the microring resonator. High-mesa waveguide structures are grown by solid-source molecular beam epitaxy and fabricated by inductively coupled plasma etching. A directional coupler with an asymmetric branching ratio is used as an input coupler to prevent the degradation of the extinction ratio of the MZM. The extinction ratio of the fabricated MRE-MZM is approximately 27 dB. The product of the half-wave voltage and phase shifter length, V(π) · L, is 1.7 Vmm in static modulation. This value is one-quarter that of a conventional MZM with the same waveguide structure.

Hitless wavelength-selective switch based on quantum well second-order series-coupled microring resonators.

A hitless wavelength-selective switch (WSS) based on InGaAs/InAlAs multiple quantum well (MQW) second-order series-coupled microring resonators is proposed and fabricated. In the core layer, a five-layer asymmetric coupled quantum well (FACQW) structure is employed. The WSS is driven by the electrorefractive index change in the FACQW core layer caused by the quantum-confined Stark effect (QCSE). The wafer for the WSS is grown by molecular beam epitaxy and waveguide structures are formed by dry etching. Boxlike spectrum responses and hitless switching characteristics of the WSS are successfully demonstrated for the first time. The change in coupling efficiency at a coupler between a ring and a busline and between rings and its effect on the switching characteristics are also discussed.