RESUMEN
Superconducting quantum interference devices (SQUIDs) are currently used as magnetic flux detectors with ultra-high sensitivity for various applications such as medical diagnostics and magnetic material microstructure analysis. Single-crystalline superconducting boron-doped diamond is an excellent candidate for fabricating high-performance SQUIDs because of its robustness and high transition temperature, critical current density, and critical field. Here, we propose a fabrication process for a single-crystalline boron-doped diamond Josephson junction with regrowth-induced step edge structure and demonstrate the first operation of a single-crystalline boron-doped diamond SQUID above 2 K. We demonstrate that the step angle is a significant parameter for forming the Josephson junction and that the step angle can be controlled by adjusting the microwave plasma-enhanced chemical vapour deposition conditions of the regrowth layer. The fabricated junction exhibits superconductor-weak superconductor-superconductor-type behaviour without hysteresis and a high critical current density of 5800 A/cm2.
RESUMEN
Thin films of (117) Bi2Sr2Ca2CuO8+δ (Bi-2212) were grown by Molecular Organic Chemical Vapor Deposition (MOCVD) on (110) SrTiO3 and (110) LaAlO3 substrates. Substrates were vicinal with off angles up to 20°. Films are 3D epitaxial and X-ray diffraction φ-ψ scans demonstrate that, while the films grown on a flat substrate are composed of twinned grains, the films on vicinal substrate are twin-free. A higher quality is obtained if growth is performed at two temperatures: Growth starts at 550â»600 °C and continues at 700â»750 °C. The twin-free film grown by the two-temperature method shows a zero-resistance critical temperature of 37 and 32 K when the measuring current is applied in-plane parallel and perpendicular to [001] direction of the substrate. Twin-free non c-axis thin films are promising for fabrication of novel planar THz devices.
RESUMEN
Single-crystal Ca(10)(Pt(4)As(8))(Fe(1.8)Pt(0.2)As(2))(5) superconducting (SC) nanowhiskers with widths down to hundreds of nanometers were successfully grown in a Ta capsule in an evacuated quartz tube by a flux method. Magnetic and electrical properties measurements demonstrate that the whiskers have excellent crystallinity with critical temperature of up to 33 K, upper critical field of 52.8 T, and critical current density of J(c) of 6.0 × 10(5) A/cm(2) (at 26 K). Since cuprate high-T(c) SC whiskers are fragile ceramics, the present intermetallic SC whiskers with high T(c) have better opportunities for device applications. Moreover, although the growth mechanism is not understood well, the technique can be potentially useful for growth of other whiskers containing toxic elements.