Identifying lifetime as one of the key parameters responsible for the low brightness of lanthanide-based OLEDs.

OLEDs based on lanthanide complexes have decisive optical advantages but are hampered by low brightness. Despite the efforts to optimize several parameters such as quantum yield and charge carrier mobility, there seems to be another key parameter that hinders their performances. Experimental data are therefore collected for mixed-ligand europium complexes with bathophenanthroline and different classes of anionic ligands and screened to identify the key parameter responsible for this situation, which turns out to be the long lifetime of their excited states. A broad literature search supports this conclusion, showing that lanthanide complexes are inferior to other classes of OLED emitters often because of their long lifetimes; furthermore, among a series of lanthanide complexes, the best results are achieved for those with the shortest lifetimes, even though they suffer from low quantum yields.

High-Pressure Synthesis of the ß-Zn3N2 Nitride and the α-ZnN4 and ß-ZnN4 Polynitrogen Compounds.

High-pressure nitrogen chemistry has expanded at a formidable rate over the past decade, unveiling the chemical richness of nitrogen. Here, the Zn-N system is investigated in laser-heated diamond anvil cells by synchrotron powder and single-crystal X-ray diffraction, revealing three hitherto unobserved nitrogen compounds: ß-Zn3N2, α-ZnN4, and ß-ZnN4, formed at 35.0, 63.5, and 81.7 GPa, respectively. Whereas ß-Zn3N2 contains the N3- nitride, both ZnN4 solids are found to be composed of polyacetylene-like [N4]∞2- chains. Upon the decompression of ß-ZnN4 below 72.7 GPa, a first-order displacive phase transition is observed from ß-ZnN4 to α-ZnN4. The α-ZnN4 phase is detected down to 11.0 GPa, at lower pressures decomposing into the known α-Zn3N2 (space group Ia3̅) and N2. The equations of states of ß-ZnN4 and α-ZnN4 are also determined, and their bulk moduli are found to be K0 = 126(9) GPa and K0 = 76(12) GPa, respectively. Density functional theory calculations were also performed and provide further insight into the Zn-N system. Moreover, comparing the Mg-N and Zn-N systems underlines the importance of minute chemical differences between metal cations in the resulting synthesized phases.

Eu(tta)3DPPZ-based organic light-emitting diodes: spin-coating vs. vacuum-deposition.

The effect of the emission layer deposition method on the characteristics of OLEDs was studied on the example of the europium mixed-ligand complex Eu(tta)3DPPZ (tta: 2-thenoyltrifluoroacetone, DPPZ: dipyrido[3,2-a:2'c,3'c-c]phenazine). The maximum brightnesses of both OLEDs almost coincided, though OLED based on the spin-coated layer operated at lower voltages. The reason for that was the higher density and smoothness of the solution-processed layer.

On the development of a new approach to the design of lanthanide-based materials for solution-processed OLEDs.

The targeted design of lanthanide-based emitters for solution-processed organic light-emitting diodes (OLEDs) resulted in obtaining an NIR OLED with one of the highest efficiencies among ytterbium-based solution-processed OLEDs (30 µW W-1). The design was aimed at the combination of high luminescence efficiency with solubility and charge carrier mobility. The latter was achieved thanks to the introduction of the purposefully selected neutral ligands, which combine electron mobility and the ability to sensitize lanthanide luminescence. Besides, the HOMO and LUMO energies and charge carrier mobility of solution-processed thin films of coordination compounds were measured experimentally for the first time, and novel highly luminescent europium-based materials with PLQYs of up to 80% and purely NIR luminescent ytterbium complexes were obtained.

The development of a new approach toward lanthanide-based OLED fabrication: new host materials for Tb-based emitters.

To develop the recently proposed approach toward host selection for lanthanide-based emitters, four phosphine oxides PO = PO1-PO4 were investigated which are able to both increase the electron mobility and to sensitize terbium luminescence. New highly soluble and brightly luminescent terbium complexes TbCl3(PO)·H2O and Tb(pobz)3(PO)·(CH3)2CO (pobz- = phenoxybenzoate) with a quantum yield of up to 100% were synthesized and thoroughly characterized. To study the electroluminescence properties of these materials, a series of solution-processed OLED devices were fabricated and their heterostructures were selected based on the HOMO and LUMO energies of PO1-PO4, which were carefully assessed by the combination of DFT and TDDFT methods. Thus, the effectiveness of the proposed approach was proved, and the influence of the anionic ligand was shown. The maximum OLED luminance reached 75 Cd m-2, which is a high value for solution-processed OLEDs based on terbium complexes.