Nematic Spin Correlations Pervading the Phase Diagram of FeSe_{1-x}S_{x}.

We use resonant inelastic x-ray scattering (RIXS) at the Fe-L_{3} edge to study the spin excitations of uniaxial-strained and unstrained FeSe_{1-x}S_{x} (0≤x≤0.21) samples. The measurements on unstrained samples reveal dispersive spin excitations in all doping levels, which show only minor doping dependence in energy dispersion, lifetime, and intensity, indicating that high-energy spin excitations are only marginally affected by sulfur doping. RIXS measurements on uniaxial-strained samples reveal that the high-energy spin-excitation anisotropy observed previously in FeSe is also present in the doping range 0200 K in x=0.18 and reaches a maximum around the nematic quantum critical doping (x_{c}≈0.17). Since the spin-excitation anisotropy directly reflects the existence of nematic spin correlations, our results indicate that high-energy nematic spin correlations pervade the regime of nematicity in the phase diagram and are enhanced by the nematic quantum criticality. These results emphasize the essential role of spin fluctuations in driving electronic nematicity and highlight the capability of uniaxial strain in tuning spin excitations in quantum materials hosting strong magnetoelastic coupling and electronic nematicity.

Large Enhancement of 2D Electron Gases Mobility Induced by Interfacial Localized Electron Screening Effect.

The interactions between delocalized and localized charges play important roles in correlated electron systems. Here, using a combination of transport measurements, spectroscopic ellipsometry (SE), and X-ray absorption spectroscopy (XAS) supported by theoretical calculations, we reveal the important role of interfacial localized charges and their screening effects in determining the mobility of (La0.3 Sr0.7 )(Al0.65 Ta0.35 )O3 /SrTiO3 (LSAT/SrTiO3 ) interfaces. When the LSAT layer thickness reaches the critical value of 5 uc, the insulating interface abruptly becomes conducting, accompanied by the appearance of a new midgap state. This midgap state emerges at ≈1 eV below the Ti t2g band and shows a strong character of Ti 3dxy - O 2p hybridization. Increasing the LSAT layer from 5 to 18 uc, the number of localized charges increases, resulting in an enhanced screening effect and higher mobile electron mobility. This observation contradicts the traditional semiconductor interface where the localized charges always suppress the carrier mobility. These results demonstrate a new strategy to probe localized charges and mobile electrons in correlated electronic systems and highlight the important role of screening effects from localized charges in improving the mobile electron mobility at complex oxide interfaces.