Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate.

We fabricated GaInAsP/InP waveguide-integrated lateral-current-injection (LCI) membrane distributed feedback (DFB) lasers on a Si substrate by using benzocyclobutene (BCB) adhesive bonding for on-chip optical interconnection. The integration ofa butt-jointed built-in (BJB) GaInAsP passive waveguide was performed by organometallic vapor-phase epitaxy (OMVPE).By introducing a strongly index-coupled DFB structure with a 50-µm-long cavity, a threshold current of 230 µA was achieved for a stripe width of 0.8 µm under room-temperature continuous-wave (RT-CW) conditions. The maximum output power of 32 µW was obtained. The lasing wavelength and submode suppression ratio (SMSR) were 1534 nm and 28 dB, respectively, at a bias current of 1.2 mA.