Cusp overlap technique decreases paravalvular leakage in self-expandable transcatheter aortic valve replacement.

The cusp overlap technique allows greater visual separation between the basal annular plane and the conduction system and decreases the permanent pacemaker implantation rate. We assessed the impact of the cusp overlap technique on conduction disturbance and paravalvular leakage after transcatheter aortic valve replacement. A total of 97 patients underwent transfemoral transcatheter aortic valve replacement with self-expandable valves at our institution from November 2018 to January 2023. The mean age of the patients was 85 years, and 23% were male. The patients were divided into two groups: the cusp overlap technique group and the non-cusp overlap technique group. We compared the clinical results between the two groups. The 30-day permanent pacemaker implantation rate was similar between the two groups (cusp overlap technique: 6.3% vs. non-cusp overlap technique: 10.2%, p = 0.48). The rate of new-onset conduction disturbance was slightly lower in the cusp overlap than non-cusp overlap technique group (18.8% vs. 34.7%, respectively; p = 0.08). The implanted valve function was similar between the two groups, but the rate of trivial or less paravalvular leakage (PVL) was significantly higher in the cusp overlap technique group on echocardiography (69% vs. 45%, p = 0.02). On multidetector computed tomography, the implantation depth at the membranous septum was significantly shorter in the cusp overlap technique group (2.0 ± 2.3 vs. 2.9 ± 1.5 mm, p = 0.02). The degree of canting was slightly smaller in the cusp overlap technique group (1.0 ± 2.2 vs. 1.7 ± 1.9 mm, p = 0.07). The relative risk of PVL equal to or greater than mild was 1.76 times higher for valve implantation without the cusp overlap technique (adjusted odds ratio, 3.74; 95% confidence interval, 1.45-9.69; p < 0.01). Transcatheter aortic valve replacement using the cusp overlap technique is associated with an optimized implantation depth, leading to fewer conduction disturbances. Optimal deployment may also maximize the radial force of self-expanding valves to reduce paravalvular leakage.

Optical film-thinning of few-layer graphene epitaxially grown on 4H-SiC(0001) surface : Robustness of monolayer-graphene against the photoexcitation.

As the properties of graphene films depend on their stacked atomic layers, their thickness should be accurately controlled to improve their specific properties. However, by existing methods, controlling the homogeneity of graphene films at the atomic level remains difficult. In this work, photo-stimulated structural modifications of few-layer graphene epitaxially grown on 4H-SiC(0001) were studied using Raman scattering spectroscopy and core-level photoemission spectroscopy. Iterative excitation with laser pulses (800nm, 100fs, p-polarized, 250mJ/cm2) changed the graphene-related 2D Raman line, which is composed of three components characterized by their different responses upon photoexcitation: two components decaying at fast and slow rates, and a component highly resistant to excitation. Core-level photoemission spectroscopy revealed that the observed decay of the 2D line was associated with the elimination of carbon atoms from the graphene layers, finally leaving the robust thin film of single-layer graphene by prolonged excitation. Therefore, this work clearly demonstrates the thickness-dependent structural stability of graphene to optical excitation and opens a promising new method for thinning graphene. An underlying mechanism for the photo-stimulated modifications was also proposed.

Thickness dependent band structure ofα-bismuthene grown on epitaxial graphene.

Along with the great interest in two-dimensional elemental materials that has emerged in recent years, atomically thin layers of bismuth have attracted attention due to physical properties on account of a strong spin-orbit coupling. Thickness dependent electronic band structure must be explored over the whole Brillouin zone in order to further explore their topological electronic properties. The anisotropic band structures along zig-zag and armchair directions of α-bismuthene (α-Bi) were resolved using the two-dimensional mapping of angle-resolved photoemission spectra. An increase in the number of layers from 1- to 2-bilayers (BLs) shifts the top of a hole band onΓ¯-X¯1line to high wavenumber regions. Subsequently, an electron pocket onΓ¯-X¯1line and a hole pocket centred atΓ¯point appears in the 3 BL α-Bi. Gapless Dirac-cone features with a large anisotropy were clearly resolved onX¯2point in the 1-BL and 2-BL α-Bi, which can be attributed to the strong spin-orbit coupling and protection by the nonsymmorphic symmetry of the α-Bi lattice.

Photoemission study on the valence band of a ß-FeSi2 thin film using synchrotron radiation.

Resonant and constant-initial state photoemission spectroscopies using synchrotron radiation were applied to investigate the valence-band electronic structure of a semi-conducting ß-type iron-disilicide (ß-FeSi(2)) thin film. The results clearly indicated that the component elements, iron (Fe) and silicon (Si), contribute differently to the valence band features; the Fe 3d orbitals mainly concentrate in the top region of the valence band while the Si 3s and 3p orbitals spread over the wide region of the valence band. The ß-FeSi(2) thin film showed a typical p-type semi-conducting nature with a work function of 4.78 eV. The ß-FeSi(2) film showed the Fe M(1)VV Auger lines around the kinetic energy of 88 eV. It would be expected from these observations that there exist strong interactions between iron and silicon atoms in the ß-FeSi(2) film resulting in orbital mixing and band formation.

Infrared absorption change in single-walled carbon nanotubes observed by combination spectroscopy of synchrotron radiation and laser.

The Drude tail due to photo-excited carriers in single-walled carbon nanotubes (SWNTs) has been observed in the mid-infrared region by using combination spectroscopy of synchrotron radiation and Ti:sapphire laser. It is found that the density of photo-excited carriers increases as the sample temperature is raised from 12 to 300 K, and their lifetime is of the order of minutes at 300 K. These facts suggest that the movement of photo-excited carriers is largely affected by some extrinsic defect, thus resulting in the long-lasting Drude reflection in SWNTs.

Two-photon spectroscopy of core excitons in barium fluoride using synchrotron radiation and laser light.

We have conducted two-photon spectroscopy of core excitons in BaF(2). Synchrotron radiation and laser light were used for 5p core-electron excitation and Auger-free luminescence was detected as the signal. Two-photon excitation enables access to f and p orbitals that cannot be reached by one-photon excitation of electrons in p orbitals. It has been found that the spin-orbit splittings of 4f and 6p states of the Ba ion in BaF(2) are 0.7 +/- 0.1 and 1.4 +/- 0.1 eV, respectively.