Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN.

The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au bilayer is commonly used for Ohmic contacts. However, Au metal contacts are quite expensive, are incompatible with the complementary metal oxide-semiconductor foundries, and also have poor thermal stability. Thus, seeking an alternative that is affordable and thermally stable is crucial. In the present study, we investigate Au-free Ohmic contact formation on p-type GaN using a bilayer Ni/Al-doped ZnO (AZO) thin film. Careful studies were focused on identifying the role of process parameters such as annealing parameters: temperature, time, and atmosphere in order to obtain an excellent Ohmic contact on p-GaN. Our results show that the contact resistance can be significantly reduced using a Ni/AZO bilayer with a suitable rapid thermal process. We demonstrate that the specific contact resistance for Ni/AZO on p-GaN can reach the lowest value of 1.85 × 10-4 Ω·cm2 for a sample with a 5 nm Ni layer annealed at 500 °C in air for 5 min. Our work demonstrates that the bilayer Ni/AZO contact could be suitable for efficient GaN power diodes or transistors.

Assessing the electrical activity of individual ZnO nanowires thermally annealed in air.

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications owing to their tunable electron concentration via structural and surface defect engineering. A 2D electrical profiling of these defects is necessary to understand their restructuring dynamics during engineering processes. Our work proposes the exploration of individual ZnO NWs, dispersed on a SiO2/p++-Si substrate without any embedding matrix, along their axial direction using scanning capacitance microscopy (SCM), which is a useful tool for 2D carrier profiling. ZnO NWs are hydrothermally grown using 0-20 mM ammonium hydroxide (NH4OH), one of the reactants of the hydrothermal synthesis, and then annealed in a tube oven at 350 °C/1.5-15 h and 450 °C/15 h. While the as-grown ZnO NWs are highly conductive, the annealed ones exhibit significant SCM data with a high signal-to-noise ratio and temperature-dependent uniformity. The SCM signal of ZnO NWs is influenced by both their reduced dimensionality and the electron screening degree inside them. The electrical activity of ZnO NWs is only observed below a critical defect concentration that depends on the annealing temperature. Optimal SCM signals of 200 and 147 mV are obtained for samples with 0 and 20 mM NH4OH, respectively, and annealed at 350 °C/15 h. The corresponding electron concentrations of 3.27 × 1018 and 4.58 × 1018 cm-3 were estimated from the calibration curve, respectively. While thermal treatment in air of ZnO NWs is an effective approach to tune the defect density, 2D electrical mapping enables identifying their optimal electrical characteristics, which could help to boost the performance of final devices exploiting their coupled semiconducting-piezoelectric properties.

Real-Time Capturing of Microscale Events Controlling the Sintering of Lead-Free Piezoelectric Potassium-Sodium Niobate.

Sintering is a very important process in materials science and technological applications. Despite breakthroughs in achieving optimized piezoelectric properties, fundamentals of K0.5 Na0.5 NbO3 (KNN) sintering are not yet fully understood, facing densification versus grain growth competition. At present, microscale events during KNN sintering under reducing atmospheres are real-time monitored using a High Temperature-Environmental Scanning Electron Microscope. A two contacting KNN particles model satisfying the Kingery and Berg's bulk diffusion model is reported. Dynamic events like individual grain growth and grain elimination process are explored through a postanalysis of recorded image series. The diffusion coefficient for oxygen vacancies of 10-8 cm2 s-1 and average boundary mobility of 10-9 cm4 J-1 s-1 are reported for the KNN ceramics. Moreover, the local pore shrinkage is consistent with the Kingery and François's concept of pore stability except that pore curvatures are not all concave, convex or flat due to anisotropic grain-boundary energies. The global grain growth kinetics are described using parabolic and/or cubic laws. The effect of atmospheres and microstructure evolution on the intrinsic and extrinsic contributions to the dielectric response using Rayleigh's law is also explored. These results bring a new breath for KNN sintering studies in order to adapt the sintering process.

Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies.

AlN nucleation layers are the basement of GaN-on-Si structures grown for light-emitting diodes, high frequency telecommunication and power switching systems. In this context, our work aims to understand the origin of propagation losses in GaN-on-Si High Electron Mobility Transistors at microwaves frequencies, which are critical for efficient devices and circuits. AlN/Si structures are grown by Metalorganic Vapor Phase Epitaxy. Acceptor dopant in-diffusion (Al and Ga) into the Si substrate is studied by Secondary Ion Mass Spectroscopy and is mainly located in the first 200 nm beneath the interface. In this region, an acceptor concentration of a few 1018 cm-3 is estimated from Capacitance-Voltage (C-V) measurements while the volume hole concentration of several 1017 cm-3 is deduced from sheet resistance. Furthermore, the combination of scanning capacitance microscopy and scanning spreading resistance microscopy enables the 2D profiling of both the p-type conductive channel and the space charge region beneath the AlN/Si interface. We demonstrate that samples grown at lower temperature exhibit a p-doped conductive channel over a shallower depth which explains lower propagation losses in comparison with those synthesized at higher temperature. Our work highlights that this p-type channel can increase the propagation losses in the high-frequency devices but also that a memory effect associated with the previous sample growths with GaN can noticeably affect the physical properties in absence of proper reactor preparation. Hence, monitoring the acceptor dopant in-diffusion beneath the AlN/Si interface is crucial for achieving efficient GaN-on-Si microwave power devices.

Ultrasonic transducers based on undoped lead-free (K0.5Na0.5)NbO3 ceramics.

Lead zirconate titanate (PZT) ceramics are the dominant piezoelectric elements for non-destructive evaluation (NDE) and ultrasonic transducers devices. However, the presence of lead content may impose the scientific community to develop lead-free ceramics, concerning human health and environmental safety. During the past ten years, many contributions have highlighted the potential properties of complex compositions like LiNbO3, LiTaO3 and LiSbO3 in the lead-free (K0.5Na0.5)NbO3 KNN system. In this context, for the first time, the practical applications and the effectiveness of simply undoped (K0.5Na0.5)NbO3 (KNN) ceramics are investigated. KNN powder is prepared by conventional solid state mixed oxide route. Ceramics of this material are prepared using conventional sintering (CS) and spark plasma sintering (SPS). Thickness coupling factor kt of 44-46%, planar coupling factor kp of 29-45%, relative permittivity at constant strain ε33,r(S) of 125-243 and acoustic impedance Z of 23-30 MRay are obtained for these two kinds of undoped KNN ceramics. Both ceramics are used to build single-element ultrasonic transducers. Relative bandwidth of 49-78% and insertion loss of -27 and -51dB are obtained for SPS and CS transducers, respectively. These results are suitable for use in non-destructive evaluation. The effectiveness of undoped KNN is evaluated using the KLM model, and compared to standard PZT based probe. Finally, chemical aging test of undoped KNN has demonstrated its stability in water.