Thermoelectrics have great potential for use in waste heat recovery to improve energy utilization. Moreover, serving as a solid-state heat pump, they have found practical application in cooling electronic products. Nevertheless, the scarcity of commercial Bi2Te3 raw materials has impeded the sustainable and widespread application of thermoelectric technology. In this study, we developed a low-cost and earth-abundant PbS compound with impressive thermoelectric performance. The optimized n-type PbS material achieved a record-high room temperature ZT of 0.64 in this system. Additionally, the first thermoelectric cooling device based on n-type PbS was fabricated, which exhibits a remarkable cooling temperature difference of ~36.9 K at room temperature. Meanwhile, the power generation efficiency of a single-leg device employing our n-type PbS material reaches ~8%, showing significant potential in harvesting waste heat into valuable electrical power. This study demonstrates the feasibility of sustainable n-type PbS as a viable alternative to commercial Bi2Te3, thereby extending the application of thermoelectrics.
Thermoelectric materials have a wide range of application because they can be directly used in refrigeration and power generation. And the Bi2Te3 stand out because of its excellent thermoelectric performance and are used in commercial thermoelectric devices. However, n-type Bi2Te3 has seriously hindered the development of Bi2Te3-based thermoelectric devices due to its weak mechanical properties and inferior thermoelectric performance. Therefore, it is urgent to develop a high-performance n-type Bi2Te3 polycrystalline. In this work, we employed interstitial Cu and the hot deformation process to optimize the thermoelectric properties of Bi2Te2.7Se0.3, and a high-performance thermoelectric module was fabricated based on this material. Our combined theoretical and experimental effort indicates that the interstitial Cu reduce the defect density in the matrix and suppresses the donor-like effect, leading to a lattice plainification effect in the material. In addition, the two-step hot deformation process significantly improves the preferred orientation of the material and boosts the mobility. As a result, a maximum ZT of 1.27 at 373 K and a remarkable high ZTave of 1.22 across the temperature range of 300-425 K are obtained. The thermoelectric generator (TEG, 7-pair) and thermoelectric cooling (TEC, 127-pair) modules were fabricated with our n-type textured Cu0.01Bi2Te2.7Se0.3 coupled with commercial p-type Bi2Te3. The TEC module demonstrates superior cooling efficiency compared with the commercial Bi2Te3 device, achieving a ΔT of 65 and 83.4 K when the hot end temperature at 300 and 350 K, respectively. In addition, the TEG module attains an impressive conversion efficiency of 6.5% at a ΔT of 225 K, which is almost the highest value among the reported Bi2Te3-based TEG modules.
The practical application of thermoelectric devices requires both high-performance n-type and p-type materials of the same system to avoid possible mismatches and improve device reliability. Currently, environmentally friendly SnTe thermoelectrics have witnessed extensive efforts to develop promising p-type transport, making it rather urgent to investigate the n-type counterparts with comparable performance. Herein, we develop a stepwise optimization strategy for improving the transport properties of n-type SnTe. First, we improve the n-type dopability of SnTe by PbSe alloying to narrow the band gap and obtain n-type transport in SnTe with halogen doping over the whole temperature range. Then, we introduce additional Pb atoms to compensate for the cationic vacancies in the SnTe-PbSe matrix, further enhancing the electron carrier concentration and electrical performance. Resultantly, the high-ranged thermoelectric performance of n-type SnTe is substantially optimized, achieving a peak ZT of â¼0.75 at 573 K with a high average ZT (ZTave) exceeding 0.5 from 300 to 823 K in the (SnTe0.98I0.02)0.6(Pb1.06Se)0.4 sample. Moreover, based on the performance optimization on n-type SnTe, for the first time, we fabricate an all-SnTe-based seven-pair thermoelectric device. This device can produce a maximum output power of â¼0.2 W and a conversion efficiency of â¼2.7% under a temperature difference of 350 K, demonstrating an important breakthrough for all-SnTe-based thermoelectric devices. Our research further illustrates the effectiveness and application potential of the environmentally friendly SnTe thermoelectrics for mid-temperature power generation.
The relentless drive toward miniaturization in microelectronic devices has sparked an urgent need for materials that offer both high thermal conductivity (TC) and excellent electrical insulation. Thermal interface materials (TIMs) possessing these dual attributes are highly sought after for modern electronics, but achieving such a combination has proven to be a formidable challenge. In this study, a cutting-edge solution is presented by developing boron nitride (BN) and graphite films layered silicone rubber composites with exceptional TC and electrical insulation properties. Through a carefully devised stacking-cutting method, the high orientation degree of both BN and graphite films is successfully preserved, resulting in an unprecedented through-plane TC of 23.7 Wm-1 K-1 and a remarkably low compressive modulus of 4.85 MPa. Furthermore, the exceptional properties of composites, including low thermal resistance and high resilience rate, make them a reliable and durable option for various applications. Practical tests demonstrate their outstanding heat dissipation performance, significantly reducing CPU temperatures in a computer cooling system. This research work unveils the possible upper limit of TC in BN-based TIMs and paves the way for their large-scale practical implementation, particularly in the thermal management of next-generation electronic devices.
Thermoelectrics has applications in power generation and refrigeration. Since only commercial Bi2 Te3 has a low abundance Te, PbSe gets attention. This work enhances the near-room temperature performance of p-type PbSe through enhancing carrier mobility via lattice plainification. Composition controlled and Cu-doped p-type PbSe crystals are grown through physical vapor deposition. Results exhibit an enhanced carrier mobility ≈2578 cm2 V-1 s-1 for Pb0.996 Cu0.0004 Se. Microstructure characterization and density functional theory calculations verify the introduced Cu atoms filled Pb vacancies, realizing lattice plainification and enhancing the carrier mobility. The Pb0.996 Cu0.0004 Se sample achieves a power factor ≈42 µW cm-1 K-2 and a ZT ≈ 0.7 at 300 K. The average ZT of it reaches ≈0.9 (300-573 K), resulting in a single-leg power generation efficiency of 7.1% at temperature difference of 270 K, comparable to that of p-type commercial Bi2 Te3 . A 7-pairs device paired the p-type Pb0.996 Cu0.0004 Se with the n-type commercial Bi2 Te3 shows a maximum cooling temperature difference ≈42 K with the hot side at 300 K, ≈65% of that of the commercial Bi2 Te3 device. This work highlights the potential of p-type PbSe for power generation and refrigeration near room temperature and hope to inspire researchers on replacing commercial Bi2 Te3 .
In the present work, a theoretical design for the viability of bilayer C4N3 (bi-C4N3) as a promising host material for Li-Se battery was conducted utilizing first-principles calculations. The AA- and AB-stacking configurations of bilayer C4N3 can effectively inhibit the shuttling of high-order polyselenides through the synergistic effect of physical confinement and strong Li-N bonds. Compared to conventional electrolytes, the AA- and AB-stacking bilayer C4N3 demonstrate enhanced adsorption capabilities for the polyselenides. The anchored structures of Se8 or Li2Sen (n = 1, 2, 4, 6, 8) molecules within the bilayer C4N3 exhibit high electrical conductivities, which are beneficial for enhancing the electrochemical performance. The catalytic effects of AA- and AB-stacking bilayer C4N3 were investigated by the reduction of Se8 and the energy barrier associated with the decomposition of Li2Se. The AA- and AB-stacking bilayer C4N3 can significantly decrease the activation barrier and promote the decomposition of Li2Se. The mean square displacement (MSD) curves reveal the pronounceably sluggish Li-ions diffusions in polyselenides within the AA- and AB-stacking bilayer C4N3, which in turn demonstrates the notable prospects in mitigating the shuttle effect.
ConspectusThe growing energy crisis and the adverse environmental impacts caused by carbon-based energy consumption have spurred the exploration of green and sustainable energy. Researchers have been devoted to developing thermoelectric technology that could directly and reversibly convert heat into electricity. By virtue of zero emissions, nonmoving parts, precise temperature control, and long service life, thermoelectrics exhibit broad application in power generation and refrigeration. Nevertheless, traditional narrow-bandgap thermoelectrics exhibit high performance within a narrow temperature range, limiting the overall energy conversion. Consequently, a selection rule for exploring advanced thermoelectrics was proposed: materials with wide-bandgap, crystals form, asymmetry, and anisotropic structure. According to the rules, we conducted much research and found some promising materials.As the lead-free, cost-effective, and stable thermoelectric candidates, layered SnSe crystals with wide-bandgap and covalent bonding have gained significant attention due to their ultralow thermal conductivity resulting from strong bonding anharmonicity, via strong polar covalent bonding, because of the electronegativity difference between the Sn and Se atoms. This was proved to be the result from the unique structure of layered SnSe crystals, a distorted rock-salt structure with high and anisotropic Grüneisen parameters. In this Account, we introduce and rethink our recent advancements in developing high-performance thermoelectric SnSe crystals from computational materials science, involving p- and n-type SnSe crystals, respectively. For p-type SnSe crystals, according to the complex valence band structures, we utilized the multiband synglisis via electronic structure calculations and multiband simulations to activate valence bands to participate in electrical transport of in-plane direction, achieving an ultrahigh power factor (PF) of â¼75 µW cm-1 K-2 at room temperature and an average figure-of-merit ZTave of â¼1.9 for Sn0.91Pb0.09Se. Besides, on the basis of defect chemistry, the characteristics of p-type SnSe crystals are determined by intrinsic Sn vacancies. We thus used point-defect calculations to achieve the lattice plainification, and we fixed the lattice intrinsic defects to weaken defect scattering of carriers along the in-plane direction, facilitating further a PF > 100 µW cm-1 K-2 and a ZT of â¼1.5 at room temperature for SnCu0.001Se. For n-type SnSe crystals, inspired by the anisotropic characteristics of the layered materials, we analyzed charge density and proposed the insight of 3D charge and 2D phonon transports and calculated the deformation potential to manipulate layered phonon-electron decoupling to achieve high performance, ultimately Pb-alloyed and Cl-doped SnSe (SnSe-Cl-PbSe) reaching a ZTave of â¼1.7 from 300 to 773 K. In the end, we offer potential perspectives on high-throughput calculations (HTC) and machine learning (ML), combined with our proposed insights, which could be a promising avenue for future thermoelectrics. By virtue of our theoretical and experimental understanding of thermoelectrics, integrating these insights as rules and descriptors for HTC and ML will accelerate the research and development of thermoelectrics. We want to share our recent works and latest perspectives in SnSe thermoelectrics, and we expect to inspire enthusiasm for innovative research on advanced thermoelectric materials and devices.
Suppressing the shuttle effect of high-order polyselenides is crucial for the development of high-performance host materials in lithium-selenium (Li-Se) batteries. Using first-principles calculations, the feasibility of Co@C3N3 monolayer as selenium cathode host material for Li-Se batteries is systematically evaluated from the aspects of binding energy, charge transfer mechanism, and catalytic effect of polyselenides in the present work. The Co@C3N3 monolayer can effectively prevent the solubilization of high-order polyselenides with large binding energy and charge transfer resulting from the synergistic effect of Li-N and Co-Se bonds. The polyselenides are inclined to adsorb on the surface of Co@C3N3 monolayer instead of interacting with the electrolytes, which effectively inhibits the shuttling of high-order polyselenides and improves cycling stability. The cobalt participation improves the conductivity of C3N3 monolayer, and the semi-metallic characteristics of the Co@C3N3 monolayer are maintained after the adsorption of Li2Sen (n = 1, 2, 4, 6, 8) or Se8 clusters, which is advantageous for the utilization of active selenium material. The crucial catalytic role of the Co@C3N3 monolayer is evaluated by examining the reduction pathway of Se8 and the decomposition barrier of Li2Se, and the results highlight the capability of Co@C3N3 monolayer to enhance the utilization of selenium and promote the transition of Li2Se. Our present work could not only provide valuable insights into the anchoring and catalytic effect of Co@C3N3 monolayer, but also shed light on the future investigation on the high performance C3N3-based host materials for Li-Se batteries.
Inspired by the groundbreaking discovery of the 2H-MoS2 monolayer with outstanding physical properties, the electronic structure, structural stability, and thermal transport of 2H-CrX2 (X = S and Se) monolayers are theoretically evaluated using density functional theory (DFT) calculations and semiempirical Boltzmann transport theory. The 2H-CrX2 (X = S and Se) monolayers are direct semiconductors with the bandgaps of 0.91 and 0.69 eV. The elastic modulus and phonon dispersion curve analysis show that the 2H-CrX2 (X = S and Se) monolayers possess excellent mechanical and dynamic stabilities on account of elastic constants satisfying the Born-Huang criterion and the absence of negative frequencies. The thermal stabilities of the 2H-CrX2 (X = S and Se) monolayers at 300 K are proved by ab initio molecular dynamics (AIMD) simulations, as evidenced by the slight changes in the structural evolution and small fluctuation in total energy. High thermal conductivities of 131.7 and 88.6 W m-1 K-1 are discovered for 2H-CrS2 and 2H-CrSe2 monolayers at 300 K. Further analysis of the phonon group velocity, phonon relaxation time, and Grüneisen parameter shows that the high lattice thermal conductivities of 2H-CrX2 (X = S and Se) monolayers could be attributed to the great bond strength, large Young's modulus, relatively small atomic mass, high phonon group velocity, and long phonon relaxation time. In addition, the various scattering mechanisms are further considered in the calculations of phonon thermal transport to evaluate the effect of the scattering rates of the 2H-CrS2 and 2H-CrSe2 monolayers on the lattice thermal conductivity, and the determinative role is found for the phonon boundary scattering. Our present study would not only offer a fundamental understanding of the thermal transport properties of the 2H-CrX2 (X = S and Se) monolayers, but also provide theoretical guidelines for the experimental investigation of thermal management materials with 2H-phase.
With the rapid development of the electronics industry, there is a growing demand for packaging materials that possess both high thermal conductivity (TC) and low electrical conductivity (EC). However, traditional insulating fillers such as boron nitride, aluminum nitride, and alumina (Al2O3) have relatively low intrinsic TC. When graphene, which exhibits both superhigh TC and EC, is used as a filler to fill epoxy resin, the TC of blends can be much higher than that of blends containing more traditional fillers. However, the high EC of graphene limits its application in cases where electrical insulation is required. To address this challenge, a method for coating graphene sheets with an in situ grown Al2O3 layer has been proposed for the fabrication of epoxy-based composites with both high TC and low EC. In the presence of a cationic surfactant, a dense Al2O3 layer with a network structure can be formed on the surface of graphene sheets. When the total content of Al2O3 and graphene mixed filler reached 30 wt%, the TC of the epoxy composite reached 0.97 W m-1 K-1, while the EC remained above 1011 Ω·cm. Finite element simulations accurately predicted TC and EC values in accordance with experimental results. This material, with its combination of high TC and good insulation properties, exhibits excellent potential for microelectronic packaging applications.
Plastic waste is one cause of climate change. To solve this problem, packaging films are increasingly produced from biodegradable polymers. Eco-friendly carboxymethyl cellulose and its blends have been developed for such a solution. Herein, a unique strategy is demonstrated to improve the mechanical and barrier properties of carboxymethyl cellulose/poly(vinyl alcohol) (CMC/PVA) blended films for the packaging of nonfood dried products. The blended films were impregnated with buckypapers containing different combinations of multiwalled carbon nanotubes, two-dimensional molybdenum disulfide (2D MoS2) nanoplatelets, and helical carbon nanotubes (HCNTs). Compared to the blend, the polymer composite films exhibit significant increases in tensile strength (~105 %, from 25.53 to 52.41 MPa), Young's modulus (~297 %, from 155.48 to 617.48 MPa), and toughness (~46 %, from 6.69 to 9.75 MJ m-3). Polymer composite films containing HCNTs in buckypapers offer the highest toughness. For barrier properties, the polymer composite films are opaque. The water vapor transmission rate of the blended films decreases (~52 %, from 13.09 to 6.25 g h-1 m-2). Moreover, the maximum thermal-degradation temperature of the blend rises from 296 to 301 °C, especially for the polymer composite films with buckypapers containing MoS2 nanosheets that contribute to the barrier effect for both water vapor and thermal-decomposition gas molecules.
Nanotubes, Carbon , Polyvinyl Alcohol , Carboxymethylcellulose Sodium , Steam , Molybdenum , Cellulose , Tensile Strength
Inspired by the experimental achievement of layered LaCuOX (X = S, Se) with superior thermoelectric (TE) performance, the TE properties of Ag-based isomorphic LaAgOX are systemically investigated by the first-principles calculation. The LaAgOS and LaAgOSe are direct semiconductors with wide bandgaps of ≈2.50 and ≈2.35 eV. Essential four-phonon and multiple carrier scattering mechanisms are considered in phonon and electronic transport calculations to improve the accuracy of the figure-of-merit (ZT). The p-type LaAgOX (X = S, Se) shows excellent TE performance on account of the large Seebeck coefficient originated from the band convergency and low thermal conductivity caused by the strong phonon-phonon scattering. Consequently, the optimal ZTs along the out-of-plane direction decrease in the order of n-type LaAgOSe (≈2.88) > p-type LaAgOSe (≈2.50) > p-type LaAgOS (≈2.42) > n-type LaAgOS (≈2.27) at 700 K, and the optimal ZTs of ≈1.16 and ≈1.29 are achieved for p-type LaAgOS and LaAgOSe at the same temperature. The present work would provide a deep insight into the phonon and electronic transport properties of LaAgOX (X = S, Se), but also could shed light on the way for the rational design of state-of-the-art heteroanionic materials for TE application.
High carrier mobility is critical to improving thermoelectric performance over a broad temperature range. However, traditional doping inevitably deteriorates carrier mobility. Herein, we develop a strategy for fine tuning of defects to improve carrier mobility. To begin, n-type PbTe is created by compensating for the intrinsic Pb vacancy in bare PbTe. Excess Pb2+ reduces vacancy scattering, resulting in a high carrier mobility of â¼3400 cm2 V-1 s-1. Then, excess Ag is introduced to compensate for the remaining intrinsic Pb vacancies. We find that excess Ag exhibits a dynamic doping process with increasing temperatures, increasing both the carrier concentration and carrier mobility throughout a wide temperature range; specifically, an ultrahigh carrier mobility â¼7300 cm2 V-1 s-1 is obtained for Pb1.01Te + 0.002Ag at 300 K. Moreover, the dynamic doping-induced high carrier concentration suppresses the bipolar thermal conductivity at high temperatures. The final step is using iodine to optimize the carrier concentration to â¼1019 cm-3. Ultimately, a maximum ZT value of â¼1.5 and a large average ZT ave value of â¼1.0 at 300-773 K are obtained for Pb1.01Te0.998I0.002 + 0.002Ag. These findings demonstrate that fine tuning of defects with <0.5% impurities can remarkably enhance carrier mobility and improve thermoelectric performance.
Orientation control of anisotropic one-dimensional (1D) and two-dimensional (2D) materials in solutions is of great importance in many fields ranging from structural materials design, the thermal management, to energy storage. Achieving fine control of vertical alignment of anisotropic fillers (such as graphene, boron nitride (BN), and carbon fiber) remains challenging. This work presents a universal and scalable method for constructing vertically aligned structures of anisotropic fillers in composites assisted by the expansion flow (using 2D BN platelets as a proof-of-concept). BN platelets in the silicone gel strip are oriented in a curved shape that includes vertical alignment in the central area and horizontal alignment close to strip surfaces. Due to the vertical orientation of BN in the central area of strips, a through-plane thermal conductivity as high as 5.65 W m-1 K-1 was obtained, which can be further improved to 6.54 W m-1 K-1 by combining BN and pitch-based carbon fibers. The expansion-flow-assisted alignment can be extended to the manufacture of a variety of polymer composites filled with 1D and 2D materials, which can find wide applications in batteries, electronics, and energy storage devices.
Crystallization kinetics is the key factor in controlling the polymer crystallization process and affecting crystallinity and crystalline morphology, which determine the polymer's main properties. In this work, the non-isothermal crystallization kinetics of graphene/PA10T composites are investigated by the Jeziorny method and Mo method, and the crystallization activation energy is calculated by the Kissinger method. It is found that the addition of an appropriate amount of graphene to PA10T can significantly promote the crystallization of PA10T and accelerate its crystallization rate. The Jeziorny equation does not have a linear relationship across the whole crystallization range, while the Mo equation does a good linear fitting. In addition, the crystallization activation energy decreases when the graphene content is below 1 wt.%. TGA results indicate that the addition of graphene improves the thermal stability of PA10T.
Extrusion-based three-dimensional (3D) printing techniques usually exhibit anisotropic thermal, mechanical, and electric properties due to the shearing-induced alignment during extrusion. However, the transformation from the extrusion to stacking process is always neglected and its influence on the final properties remains ambiguous. In this work, we adopt two different sized boron nitride (BN) sheets, namely, small-sized BN (S-BN) and large-sized BN (L-BN), to explore their impact on the orientation degree, morphology, and final anisotropic thermal conductivity (TC) of thermoplastic polyurethane (TPU) composites by fused deposition modeling. The transformation from one-dimensional axial alignment in the extruded filament to two-dimensional alignment (horizontal and vertical alignment) in the stacking filament of BN sheets is observed, and its impact on anisotropic TC in three directions is clarified. It is found that L-BN/TPU composites show a high TC of 6.45 W m-1 K-1 at 60 wt % BN content along the printing direction, while at a lower content (<40 wt %), S-BN/TPU composites exhibit a higher TC than L-BN/TPU composites. Effects of orientation, viscosity, and voids are comprehensively considered to elucidate such differences. Finally, heat dissipation tests demonstrate the great potential of 3D printed BN/TPU composites to be used in thermal management applications.
Pentagonal compounds, as a new family of 2D materials, have recently been extensively studied in the fields of electrocatalysis, photovoltaics, and thermoelectrics. Encouraged by the successful synthesis of pentagonal PdSe2, the thermoelectric properties of low-cost pentagonal NiX2 (X = S, Se, and Te) monolayers are theoretically predicted with the help of first-principles calculations and the semiclassical Boltzmann transport theory. The high dynamic and thermal stabilities of pentagonal NiX2 (X = S, Se, and Te) monolayers are confirmed according to the phonon dispersion spectrums and ab initio molecular dynamics (AIMD) simulations. Indirect semiconductor features with wide bandgaps of 2.44, 2.31, and 1.88 eV at the Heyd-Scuseria-Ernzerhof (HSE06) level are discovered for pentagonal NiS2, NiSe2, and NiTe2 monolayers. Combining the Boltzmann transport equation and deformation potential theory, the Seebeck coefficient, power factor, and thermoelectric figure of merit (ZT) of NiX2 (X = S, Se, and Te) monolayers are evaluated from 300 to 600 K. The strongly anisotropic ZT values are discovered, which are attributed to the significant differences in electrical and thermal transport along the x and y directions. In addition, low lattice thermal conductivities are observed at 600 K for the pentagonal NiTe2 monolayer, accompanying higher ZT values of 1.81 and 1.58 along the x and y directions. The predicted thermoelectric properties indicate that the low-cost pentagonal NiSe2 and NiTe2 monolayers are potential anisotropic thermoelectric materials with high performance.
Carbonaceous materials with pores or bilayer spaces are a kind of potential host material to confine polyselenide diffusion and mitigate the shuttling effect. In the present work, a theoretical design of bilayer C2N (bi-C2N) as an efficient host material for lithium-selenium (Li-Se) batteries was explored by first-principles calculations. AA- and AB-stacking bilayer C2N could alleviate the dissolution of high-order polyselenides through a synergistic effect of physical confinement and strong Li-N bonds. Lithium polyselenides prefer to anchor on AA- and AB-stacking bilayer C2N instead of the commonly used electrolytes, showing their capabilities in suppressing the shuttle effect. Charge transfer occurs from Se8 and Li2Sen molecules (LiPSes) to AA- and AB-stacking bilayer C2N, giving rise to the formation of strong Li-N bonds. The AA- and AB-stacking LiPSes@C2N systems possess high electrical conductivities, which is beneficial for high electrochemical performance. In addition, the reversible conversion mechanisms of Li2Sen in the AA- and AB-stacking bilayer C2N are also investigated through the energy changes and decomposition reaction of the Li2Se molecule, and the results indicate that AA- and AB-stacking bilayer C2N facilitate the formation and decomposition of Li2Se by decreasing the active energy barriers and improving the selenium utilization rates. Our present work could shed some light on a possible strategy for designing highly efficient bilayer host materials for high performance Li-Se batteries.
High-quality hexagonal BN (hBN) crystals, owing to their irreplaceable roles in new functional devices such as universal substrates and excellent layered insulators are exceedingly required in the field of two-dimensional (2D) materials. Although large-scale monolayer hBN crystals have been successfully grown on catalytic metals, the synthesis of large-area continuous hBN films with thickness in microns is challenging, hindering their applications at the mesoscopic level. Herein, we report the single-metal flux growth of centimeter-large, micron-thick, and high-quality continuous hBN films by balancing the grain size and coverage. The as-grown films can be readily exfoliated and transferred onto arbitrary substrates. Isotopically engineered hBN crystals can be obtained as well by the method. The narrow Raman line widths of the intralayer E2g mode peak (2.9 cm-1 for h11BN, 3.3 cm-1 for h10BN, and 7.9 cm-1 for hNaBN) and ultrahigh thermal conductivity (830 W m-1 K-1 for 4L h11BN) demonstrate high crystal quality and low defect density. Our results provide the foundation for the cost-efficient and lab-achievable synthesis of high-quality hBN films aimed at its mesoscopic applications.
Thermal management is ubiquitous in the modern world and indispensable for a sustainable future. Radiative heat management provides unique advantages because the heat transfer can be controlled by the surface. However, different object emissivities require different tuning strategies, which poses challenges to develop dynamic and universal radiative heat management devices. Here, we demonstrate a triple-mode midinfrared modulator that can switch between passive heating and cooling suitable for all types of object surface emissivities. The device comprises a surface-textured infrared-semiabsorbing elastomer coated with a metallic back reflector, which is biaxially strained to sequentially achieve three fundamental modes: emission, reflection, and transmission. By analyzing and optimizing the coupling between optical and mechanical properties, we achieve a performance as follows: emittance contrast Δε = 0.58, transmittance contrast Δτ = 0.49, and reflectance contrast Δρ = 0.39. The device can provide a new design paradigm of radiation heat regulation for wearable, robotics, and camouflage technologies.
