Hydrogenous Zintl phase Ba3Si4Hx (x = 1-2): transforming Si4 "butterfly" anions into tetrahedral moieties.

The hydride Ba(3)Si(4)H(x) (x = 1-2) was prepared by sintering the Zintl phase Ba(3)Si(4), which contains Si(4)(6-) butterfly-shaped polyanions, in a hydrogen atmosphere at pressures of 10-20 bar and temperatures of around 300 °C. Initial structural analysis using powder neutron and X-ray diffraction data suggested that Ba(3)Si(4)H(x) adopts the Ba(3)Ge(4)C(2) type [space group I4/mcm (No. 140), a ≈ 8.44 Å, c ≈ 11.95 Å, Z = 8] where Ba atoms form a three-dimensional array of corner-condensed octahedra, which are centered by H atoms. Tetrahedron-shaped Si(4) polyanions complete a perovskite-like arrangement. Thus, hydride formation is accompanied by oxidation of the butterfly polyanion, but the model with the composition Ba(3)Si(4)H is not charge-balanced. First-principles computations revealed an alternative structural scenario for Ba(3)Si(4)H(x), which is based on filling pyramidal Ba5 interstices in Ba(3)Si(4). The limiting composition is x = 2 [space group P4(2)/mmm (No. 136), a ≈ 8.4066 Å, c ≈ 12.9186 Å, Z = 8], and for x > 1, Si atoms also adopt tetrahedron-shaped polyanions. Transmission electron microscopy investigations showed that Ba(3)Si(4)H(x) is heavily disordered in the c direction. Most plausible is to assume that Ba(3)Si(4)H(x) has a variable H content (x = 1-2) and corresponds to a random intergrowth of P- and I-type structure blocks. In either form, Ba(3)Si(4)H(x) is classified as an interstitial hydride. Polyanionic hydrides in which H is covalently attached to Si remain elusive.

Synthesis, structure, and properties of the electron-poor II-V semiconductor ZnAs.

ZnAs was synthesized at 6 GPa and 1273 K utilizing multianvil high-pressure techniques and structurally characterized by single-crystal and powder X-ray diffraction (space group Pbca (No. 61), a = 5.6768(2) Å, b = 7.2796(2) Å, c = 7.5593(2) Å, Z = 8). The compound is isostructural to ZnSb (CdSb type) and displays multicenter bonded rhomboid rings Zn2As2, which are connected to each other by classical two-center, two-electron bonds. At ambient pressure ZnAs is metastable with respect to Zn3As2 and ZnAs2. When heating at a rate of 10 K/min decomposition takes place at ∼700 K. Diffuse reflectance measurements reveal a band gap of 0.9 eV. Electrical resistivity, thermopower, and thermal conductivity were measured in the temperature range of 2-400 K and compared to thermoelectric ZnSb. The room temperature values of the resistivity and thermopower are ∼1 Ω cm and +27 µV/K, respectively. These values are considerably higher and lower, respectively, compared to ZnSb. Above 150 K the thermal conductivity attains low values, around 2 W/m·K, which is similar to that of ZnSb. The heat capacity of ZnAs was measured between 2 and 300 K and partitioned into a Debye and two Einstein contributions with temperatures of θD = 234 K, θE1 = 95 K, and θE2 = 353 K. Heat capacity and thermal conductivity of ZnSb and ZnAs show very similar features, which possibly relates to their common electron-poor bonding properties.

Normalized differential detection by use of smart pixels with smart illumination.

Smart pixels permit rapid signal processing through the use of integrated photodetectors and processing electronics on a single semiconductor chip. Smart pixels with smart illumination can increase the dynamic range and functionality of smart pixels by employing optoelectronic feedback to control the illumination of a scene. This combination of smart pixels and optoelectronic feedback leads to many potential sensor applications, including normalized differential detection, which is modeled and demonstrated here.