Fabrication methods for high reflectance dielectric-metal point contact rear mirror for optoelectronic devices.

The patterned dielectric back contact (PDBC) structure can be used to form a point-contact architecture that features a dielectric spacer with spatially distributed, reduced-area metal point contacts between the semiconductor back not recognized contact layer and the metal back contact. In this structure, the dielectric-metal region provides higher reflectance and is electrically insulating. Reduced-area metal point contacts provide electrical conduction for the back contact but typically have lower reflectance. The fabrication methods discussed in this article were developed for thermophotovoltaic cells, but they apply to any III-V optoelectronic device requiring the use of a conductive and highly reflective back contact. Patterned dielectric back contacts may be used for enhanced sub-bandgap reflectance, for enhanced photon recycling near the bandgap energy, or both depending on the optoelectronic application. The following fabrication methods are discussed in the article•PDBC fabrication procedures for spin-on dielectrics and commonly evaporated dielectrics to form the spacer layer.•Methods to selectively etch a parasitically absorbing back contact layer using metal point contacts as an etch mask.•Methods incorporating a dielectric etch through different process techniques such as reactive ion and wet etching.

Nanoscopic control and quantification of enantioselective optical forces.

Circularly polarized light (CPL) exerts a force of different magnitude on left- and right-handed enantiomers, an effect that could be exploited for chiral resolution of chemical compounds as well as controlled assembly of chiral nanostructures. However, enantioselective optical forces are challenging to control and quantify because their magnitude is extremely small (sub-piconewton) and varies in space with sub-micrometre resolution. Here, we report a technique to both strengthen and visualize these forces, using a chiral atomic force microscope probe coupled to a plasmonic optical tweezer. Illumination of the plasmonic tweezer with CPL exerts a force on the microscope tip that depends on the handedness of the light and the tip. In particular, for a left-handed chiral tip, transverse forces are attractive with left-CPL and repulsive with right-CPL. Additionally, total force differences between opposite-handed specimens exceed 10 pN. The microscope tip can map chiral forces with 2 nm lateral resolution, revealing a distinct spatial distribution of forces for each handedness.

Hot-Carrier-Mediated Photon Upconversion in Metal-Decorated Quantum Wells.

Manipulating the frequency of electromagnetic waves forms the core of many modern technologies, ranging from imaging and spectroscopy to radio and optical communication. The process of converting photons from higher to lower energy is easily accomplished and technologically widespread. However, upconversion, which is the process of converting lower-energy photons into higher-energy photons, is still a growing field of study with nascent applications and burgeoning interest. Here, we experimentally demonstrate a new photon upconversion technique mediated by hot carriers in plasmonic nanostructures. Hot holes and hot electrons generated via plasmon decay in illuminated metal nanoparticles are injected into an adjacent semiconductor quantum well where they radiatively recombine to emit higher-energy photons. Using GaN/InGaN quantum wells decorated with gold and silver nanoparticles, we show photon upconversion from 2.4 to 2.8 eV. The process scales linearly with illumination power and enables both geometry- and polarization-based tunability. The conversion of plasmonic losses into upconverted optical emission has the potential to impact bioimaging, on-chip wavelength conversion, and high-efficiency photovoltaics.