Towards large scale integration of MoS2/graphene heterostructure with ALD-grown MoS2.

In the pursuit of ultrathin and highly sensitive photodetectors, a promising approach involves leveraging the combination of light-sensitive two-dimensional (2D) semiconducting transition-metal dichalcogenides, such as MoS2and the high electrical conductivity of graphene. Over the past decade, exfoliated 2D materials and electron-beam lithography have been used extensively to demonstrate feasibility on single devices. But for these devices to be used in the real-world systems, it is necessary to demonstrate good device performance similar to lab-based devices with repeatability of the results from device to device and a path to large scale manufacturing. To work in this way, a fabrication process of MoS2/graphene vertical heterostructures with a wafer-scale integration in a CMOS compatible foundry environment is evaluated here. Large-scale atomic layer deposition on 8 inch silicon wafers is used for the growth of MoS2layers which are then transferred on a 4 inch graphene-based wafer. The MoS2/graphene phototransistors are fabricated collectively, achieving a minimum channel length of 10µm. The results measured on dozen of devices demonstrate a photoresponsivity of 50 A W-1and a remarkable sensitivity as low as 10 nW at 660 nm. These results not only compete with lab-based photodetectors made of chemical vapor deposition grown MoS2layers transferred on graphene, but also pave the way for the large-scale integration of these emerging 2D heterostructures in optoelectronic devices and sensors.

Stabilizing an ultrathin MoS2 layer during electrocatalytic hydrogen evolution with a crystalline SnO2 underlayer.

Amorphous MoS2 has been investigated abundantly as a catalyst for hydrogen evolution. Not only its performance but also its chemical stability in acidic conditions have been reported widely. However, its adhesion has not been studied systematically in the electrochemical context. The use of MoS2 as a lubricant is not auspicious for this purpose. In this work, we start with a macroporous anodic alumina template as a model support, add an underlayer of SnO2 to provide electrical conduction and adhesion, then provide the catalytically active, amorphous MoS2 material by atomic layer deposition (ALD). The composition, morphology, and crystalline or amorphous character of all layers are confirmed by spectroscopic ellipsometry, X-ray photoelectron spectroscopy, grazing incidence X-ray diffractometry, scanning electron microscopy and energy dispersive X-ray spectroscopy. The electrocatalytic water reduction performance of the macroporous AAO/SnO2/MoS2 electrodes, quantified by voltammetry, steady-state chronoamperometry and electrochemical impedance spectroscopy, is improved by annealing the SnO2 layer prior to MoS2 deposition. Varying the geometric parameters of the electrode composite yields an optimized performance of 10 mA cm-2 at 0.22 V overpotential, with a catalyst loading of 0.16 mg cm-2. The electrode's stability is contingent on SnO2 crystallinity. Amorphous SnO2 allows for a gradual dewetting of the originally continuous MoS2 layer over wide areas. In stark contrast to this, crystalline SnO2 maintains the continuity of MoS2 until at least 0.3 V overpotential.

Electrocatalytic Performance of Titania Nanotube Arrays Coated with MoS2 by ALD toward the Hydrogen Evolution Reaction.

The electrochemical splitting of water provides an elegant way to store renewable energy, but it is limited by the cost of the noble metals used as catalysts. Among the catalysts used for the reduction of water to hydrogen, MoS2 has been identified as one of the most promising materials as it can be engineered to provide not only a large surface area but also an abundance of unsaturated and reactive coordination sites. Using Mo[NMe2]4 and H2S as precursors, a desired thickness of amorphous MoS2 can be deposited on TiO2 nanotubes by atomic layer deposition. The identity and structure of the MoS2 film are confirmed by spectroscopic ellipsometry, X-ray photoelectron spectroscopy, scanning electron microscopy, and energy dispersive X-ray spectroscopy. The electrocatalytic performance of MoS2 is quantified as it depends on the tube length and the MoS2 layer thickness through voltammetry, steady-state chronoamperometry, and electrochemical impedance spectroscopy. The best sample reaches 10 mA/cm2 current density at 189 mV overpotential in 0.5 M H2SO4. All of the various geometries of our nanostructured electrodes reach an electrocatalytic proficiency comparable with the state-of-the-art MoS2 electrodes, and the dependence of performance parameters on geometry suggests that the system can even be improved further.

A novel 2-step ALD route to ultra-thin MoS2 films on SiO2 through a surface organometallic intermediate.

The lack of scalable-methods for the growth of 2D MoS2 crystals, an identified emerging material with applications ranging from electronics to energy storage, is a current bottleneck against its large-scale deployment. We report here a two-step ALD route with new organometallic precursors, Mo(NMe2)4 and 1,2-ethanedithiol (HS(CH2)2SH) which consists in the layer-by-layer deposition of an amorphous surface Mo(iv) thiolate at 50 °C, followed by a subsequent annealing at higher temperature leading to ultra-thin MoS2 nanocrystals (∼20 nm-large) in the 1-2 monolayer range. In contrast to the usual high-temperature growth of 2D dichalcogenides, where nucleation is the key parameter to control both thickness and uniformity, our novel two-step ALD approach enables chemical control over these two parameters, the growth of 2D MoS2 crystals upon annealing being ensured by spatial confinement and facilitated by the formation of a buffer oxysulfide interlayer.