Aligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic Computing.

This paper presents aligned carbon nanotube (CNT) synaptic transistors for large-scale neuromorphic computing systems. The synaptic behavior of these devices is achieved via charge-trapping effects, commonly observed in carbon-based nanoelectronics. In this work, charge trapping in the high- k dielectric layer of top-gated CNT field-effect transistors (FETs) enables the gradual analog programmability of the CNT channel conductance with a large dynamic range ( i. e., large on/off ratio). Aligned CNT synaptic devices present significant improvements over conventional memristor technologies ( e. g., RRAM), which suffer from abrupt transitions in the conductance modulation and/or a small dynamic range. Here, we demonstrate exceptional uniformity of aligned CNT FET synaptic behavior, as well as significant robustness and nonvolatility via pulsed experiments, establishing their suitability for neural network implementations. Additionally, this technology is based on a wafer-level technique for constructing highly aligned arrays of CNTs with high semiconducting purity and is fully CMOS compatible, ensuring the practicality of large-scale CNT+CMOS neuromorphic systems. We also demonstrate fine-tunability of the aligned CNT synaptic behavior and discuss its application to adaptive online learning schemes and to homeostatic regulation of artificial neuron firing rates. We simulate the implementation of unsupervised learning for pattern recognition using a spike-timing-dependent-plasticity scheme, indicate system-level performance (as indicated by the recognition accuracy), and demonstrate improvements in the learning rate resulting from tuning the synaptic characteristics of aligned CNT devices.

High-density two-dimensional small polaron gas in a delta-doped Mott insulator.

Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of random disorder and introduce a new arena in which to explore the effect of electron correlations and dimensionality. Epitaxial films of the prototypical Mott insulator GdTiO3 are delta-doped by substituting a single (GdO)(+1) plane with a monolayer of charge neutral SrO to produce a two-dimensional system with high planar doping density. Unlike metallic SrTiO3 quantum wells in GdTiO3 the single SrO delta-doped layer exhibits thermally activated DC and optical conductivity that agree in a quantitative manner with predictions of small polaron transport but with an extremely high two-dimensional density of polarons, ~7 × 10(14) cm(-2).

Large-area flexible 3D optical negative index metamaterial formed by nanotransfer printing.

Negative-index metamaterials (NIMs) are engineered structures with optical properties that cannot be obtained in naturally occurring materials. Recent work has demonstrated that focused ion beam and layer-by-layer electron-beam lithography can be used to pattern the necessary nanoscale features over small areas (hundreds of µm(2)) for metamaterials with three-dimensional layouts and interesting characteristics, including negative-index behaviour in the optical regime. A key challenge is in the fabrication of such three-dimensional NIMs with sizes and at throughputs necessary for many realistic applications (including lenses, resonators and other photonic components). We report a simple printing approach capable of forming large-area, high-quality NIMs with three-dimensional, multilayer formats. Here, a silicon wafer with deep, nanoscale patterns of surface relief serves as a reusable stamp. Blanket deposition of alternating layers of silver and magnesium fluoride onto such a stamp represents a process for 'inking' it with thick, multilayer assemblies. Transfer printing this ink material onto rigid or flexible substrates completes the fabrication in a high-throughput manner. Experimental measurements and simulation results show that macroscale, three-dimensional NIMs (>75 cm(2)) nano-manufactured in this way exhibit a strong, negative index of refraction in the near-infrared spectral range, with excellent figures of merit.