Growth of black arsenic phosphorus thin films and its application for field-effect transistors.

Black arsenic phosphorus single crystals were grown using a short-way transport technique resulting in crystals up to 12 × 110µmand ranging from 200 nm to 2µmthick. The reaction conditions require tin, tin (IV) iodide, gray arsenic, and red phosphorus placed in an evacuated quartz ampule and ramped up to a maximum temperature of 630 °C. The crystal structure and elemental composition were characterized using Raman spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, cross-sectional transmission microscopy, and electron backscatter diffraction. The data provides valuable insight into the growth mechanism. A previously developed b-P thin film growth technique can be adapted to b-AsP film growth with slight modifications to the reaction duration and reactant mass ratios. Devices fabricated from exfoliated bulk-b-AsP grown in the same reaction condition as the thin film growth process are characterized, showing an on-off current ratio of 102, a threshold voltage of -60 V, and a peak field-effect hole mobility of 23 cm2V-1s-1atVd= -0.9 V andVg= -60 V.

Rational control of WSe2 layer number via hydrogen-controlled chemical vapor deposition.

Tranistion metal dichalcogenides are a promising family of materials for electronics and optoelectronics, in part due to their range of bandgaps that can be modulated by layer number. Here, we show that WSe2 can be selectively grown with one, two, or three layers, as regulated by a one-step hydrogen-controlled chemical vapor deposition (H-CVD) process involving cyclical pulses of H2 flow. The physical and vibrational properties of the resulting mono-, bi-, and tri-layer WSe2 films are characterized by atomic force microscopy and Raman spectroscopy. Modifying the H-CVD process to include more than three H2 pulses results in thicker WSe2 films, however the thickness of these films is not well controlled and feature small, bulk-like pyramidal islands. Transmission electron microscopy analysis reveals that most of these islands exhibit a spiral structure and appear to be grown via screw-dislocation-driven growth, similar to other works. Therefore, the H-CVD process is demonstrated to be a powerful tool for controlling the layer thickness of WSe2, but its practicality is limited to the few-layer regime.

Thin-Film Deposition of Surface Passivated Black Phosphorus.

A single-step, direct silicon-substrate growth of black phosphorus (BP) crystals is achieved in a self-contained short-way transport technique under low-pressure conditions (<1.5 MPa). A 115 nm-thick BP hero single crystal is formed with lateral dimensions of 10 × 85 µm. The synthesis proceeds with Sn, SnI4, and red phosphorus and has a well-defined phosphorus phase dependency on the SnI4 concentration. Furthermore, in situ Sn passivation of BP occurs. This allows long-term stability with no sign of any degradation after 4 months of exposure to ambient conditions. Single-crystal BP flakes and multigrain flakes with high- and low-angle grain boundaries are achieved. Electron backscatter diffraction determined crystal growth to be independent of the substrate, which is further supported by successful growth on various substrates, including sapphire, silicon nitride, silicon, and silicon oxide. Cross-sectional transmission electron microscopy of a single crystal flake provides valuable insight into the growth mechanism. Elemental Sn encapsulates BP crystals, and crystalline SnI x inclusions are found to be scattered throughout the BP crystal. It is suggested that SnI x inclusions may provide the dominant mechanism for seeding vertical growth. IR absorption measurements for thin and bulk BP recipes show an equal response below Eg dominated by free carrier absorption. FET devices fabricated from thin-film and bulk BP recipes show improved device performance compared to unpassivated BP films of equal thickness with an on/off current ratio >102.

Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition.

Correction for 'Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition' by Stephen A. Campbell et al., Nanoscale, 2018, 10, 21374-21385.

Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition.

Tungsten diselenide (WSe2) is a particularly interesting 2D material due to its p-type conductivity. Here we report a systematic single-step process to optimize crystal size by variation of multiple growth parameters resulting in hexagonal single crystals up to 165 µm wide. We then show that these large single crystals can be controllably in situ doped with the acceptor Niobium (Nb). First principles calculations suggest that substitutional Nb doping of W would yield p-doping with no gap trap states. When used as the active layer of a field effect transistor (FET), doped crystals exhibit conventional p-type behavior, rather than the ambipolar behaviour seen in undoped WSe2 FETs. Nb-doped WSe2 FETs yield a maximum field effect mobility of 116 cm2 V-1 s-1, slightly higher than its undoped counterpart, with an on/off ratio of 106. Doping reduces the contact resistance of WSe2, reaching a minimum value of 0.55 kΩµm in WSe2 FETs. The areal density of holes in Nb-doped WSe2 is approximately double that of undoped WSe2, indicating that Nb doping is working as an effective acceptor. Doping concentration can be controlled over several orders of magnitudes, allowing it to be used to control: FET threshold voltage, FET off-state leakage, and contact resistance.

The big picture on nanomedicine: the state of investigational and approved nanomedicine products.

Developments in nanomedicine are expected to provide solutions to many of modern medicine's unsolved problems, so it is no surprise that the literature contains many articles discussing the subject. However, existing reviews tend to focus on specific sectors of nanomedicine or to take a very forward-looking stance and fail to provide a complete perspective on the current landscape. This article provides a more comprehensive and contemporary inventory of nanomedicine products. A keyword search of literature, clinical trial registries, and the Web yielded 247 nanomedicine products that are approved or in various stages of clinical study. Specific information on each was gathered, so the overall field could be described based on various dimensions, including FDA classification, approval status, nanoscale size, treated condition, nanostructure, and others. In addition to documenting the many nanomedicine products already in use in humans, this study identifies several interesting trends forecasting the future of nanomedicine. FROM THE CLINICAL EDITOR: In this one of a kind review, the state of nanomedicine commercialization is discussed, concentrating only on nanomedicine-based developments and products that are either in clinical trials or have already been approved for use.

Physical Chemistry Research Toward Proton Exchange Membrane Fuel Cell Advancement.

Hydrogen fuel cells, the most common type of which are proton exchange membrane fuel cells (PEMFCs), are on a rapid path to commercialization. We credit physical chemistry research in oxygen reduction electrocatalysis and theory with significant breakthroughs, enabling more cost-effective fuel cells. However, most of the physical chemistry has been restricted to studies of platinum and related alloys. More work is needed to better understand electrocatalysts generally in terms of properties and characterization. While the advent of such highly active catalysts will enable smaller, less expensive, and more powerful stacks, they will require better understanding and a complete restructuring of the diffusion media in PEMFCs to facilitate faster transport of the reactants (O2) and products (H2O). Even Ohmic losses between materials become more important at high power. Such lessons from PEMFC research are relevant to other electrochemical conversion systems, including Li-air batteries and flow batteries.

Structure and composition of Zn(x)Cd(1-xS) films synthesized through chemical bath deposition.

Zinc cadmium sulfide (ZnxCd1-xS) thin films grown through chemical bath deposition are used in chalcopyrite solar cells as the buffer layer between the n-type zinc oxide and the p-type light absorbing chalcopyrite film. To optimize energetic band alignment and optical absorption, advanced solar cell architectures require the ability to manipulate x as a function of distance from the absorber-ZnCdS interface. Herein, we investigate the fundamental factors that govern the evolution of the composition as a function of depth in the film. By changing the initial concentrations of Zn and Cd salts in the bath, the entire range of overall compositions ranging from primarily cubic ZnS to primarily hexagonal CdS could be deposited. However, films are inhomogeneous and x varies significantly as function of distance from the film-substrate interface. Films with high overall Zn concentration (x > 0.5) exhibit a Cd-rich layer near the film-substrate interface because Cd is more reactive than Zn. This layer is typically beneath a nearly pure ZnS film that forms after the Cd-rich layers are deposited and Cd is depleted in the bath. In films with high overall Cd concentration (x < 0.5) the Zn concentration rises towards the film's surface. Fortunately, these gradients are favorable for solar cells based on low band gap chalcopyrite films.

Recommendations for nanomedicine human subjects research oversight: an evolutionary approach for an emerging field.

The nanomedicine field is fast evolving toward complex, "active," and interactive formulations. Like many emerging technologies, nanomedicine raises questions of how human subjects research (HSR) should be conducted and the adequacy of current oversight, as well as how to integrate concerns over occupational, bystander, and environmental exposures. The history of oversight for HSR investigating emerging technologies is a patchwork quilt without systematic justification of when ordinary oversight for HSR is enough versus when added oversight is warranted. Nanomedicine HSR provides an occasion to think systematically about appropriate oversight, especially early in the evolution of a technology, when hazard and risk information may remain incomplete. This paper presents the consensus recommendations of a multidisciplinary, NIH-funded project group, to ensure a science-based and ethically informed approach to HSR issues in nanomedicine, and to integrate HSR analysis with analysis of occupational, bystander, and environmental concerns. We recommend creating two bodies, an interagency Human Subjects Research in Nanomedicine (HSR/N) Working Group and a Secretary's Advisory Committee on Nanomedicine (SAC/N). HSR/N and SAC/N should perform 3 primary functions: (1) analysis of the attributes and subsets of nanomedicine interventions that raise HSR challenges and current gaps in oversight; (2) providing advice to relevant agencies and institutional bodies on the HSR issues, as well as federal and federal-institutional coordination; and (3) gathering and analyzing information on HSR issues as they emerge in nanomedicine. HSR/N and SAC/N will create a home for HSR analysis and coordination in DHHS (the key agency for relevant HSR oversight), optimize federal and institutional approaches, and allow HSR review to evolve with greater knowledge about nanomedicine interventions and greater clarity about attributes of concern.