RESUMEN
Due to excellent gas sensing performances, such as high responsivity, good selectivity, and long-term stability, two-dimensional (2D) nonlayered metal oxide semiconductors have attracted wide attention. However, their thickness-dependent gas sensing behaviors are rarely investigated, which is critical in the development of practical 2D sensors. In this work, 2D In2O3 crystals with a range of thicknesses are realized by extracting the self-limited oxide layer from the liquid indium droplets in a controlled environment. A strong thickness-dependent optoelectronic NO2 sensing behavior at room temperature is observed. While full reversibility and excellent selectivity toward NO2 are shown despite the thicknesses of 2D In2O3, the 1.9 nm thick In2O3 exhibits a maximum response amplitude (ΔI/Ig = 1300) for 10 ppm of NO2 at room temperature with 365 nm light irradiation, which is about 18, 58, and 810 times larger than those of its 3.1 nm thick, 4.5 nm thick, and 6.2 nm thick counterparts, respectively. The shortest response and recovery times (i.e., 40 s/48 s) are demonstrated for the 1.88 nm thick In2O3 as well. We correlate such a phenomenon with the change in the In2O3 band structure, which is influenced by the thickness of 2D crystals. This work provides in-depth knowledge of the thickness-dependent gas-sensing performances of emerging 2D nonlayered metal oxide crystals, as well as the opportunities to develop next-generation high-performing room-temperature gas sensors.
RESUMEN
Thiol functionalization of two-dimensional (2D) metal sulfides has been demonstrated as an effective approach to enhance the sensing performances. However, most thiol functionalization is realized by multiple-step approaches in liquid medium and depends on the dispersity of 2D materials. Here, we utilize a three-dimensional (3D) In2S3 nano-porous structure that self-assembled from 2D components as the nanoreactor, in which the surface-absorbed thiol molecules from the chemical residues of the nanoreactor are used for the in-situ covalent functionalization. Such functionalization is realized by facile heat the nanoreactor at 100 °C, leading to the recombing sulfur vacancies with thiol-terminated groups. The NO2 sensing performances of such functionalized nanoreactor are investigated at room temperature, in which In2S3-100 exhibits a response magnitude of 21.5 towards 10 ppm NO2 with full reversibility, high selectivity, and excellent repeatability. Such high-performance gas sensors can be attributed to the additional electrons that transferring from the functional group into the host, thus significantly modifying the electronic band structure. This work provides a guideline for the facile in-situ functionalization of metal sulfides and an efficient strategy for the high performances gas sensors without external stimulus.
RESUMEN
Paint layer was stripped from the 2024 aluminium alloy aircraft skin by either 1000 grit sandpaper or laser with 150 ps pulse width while the laser paint stripping (LPS) process was recorded by a high-speed camera. The surface and cross-section morphologies, chemical compositions and chemical valences of obtained the paint stripping samples were also characterise. The corrosion resistance was determined by the Potentiodynamic Polarization Curve (PPC). On mechanical paint stripping (MPS) samples, a large amount of scratches remained. Surface roughness increased and the oxide film was removed completely. The trace of the laser scan was observable on the surface of LPS samples. Recrystallisation occurred on the LPS surface and eventually formed arrayed micro and sub-micro structures. The oxide film is mainly composed of Al2O3 with a thickness about 2.10 µm. The corrosion current density of mechanical and LPS samples are 3.66 ×10-2 mA·cm-2 and 6.66×10-5 mA·cm-2, respectively. Comparing to MPS which removed all the oxide film and damaged the substrate metal, LPS only damaged the oxide film mildly without damaging metal substrate. The remaining oxide film contributes to a higher corrosion resistance of the LPS sample.
RESUMEN
Reversible H2 gas sensing at room temperature has been highly desirable given the booming of the Internet of Things (IoT), zero-emission vehicles, and fuel cell technologies. Conventional metal oxide-based semiconducting gas sensors have been considered as suitable candidates given their low-cost, high sensitivity, and long stability. However, the dominant sensing mechanism is based on the chemisorption of gas molecules which requires elevated temperatures to activate the catalytic reaction of target gas molecules with chemisorbed O, leaving the drawbacks of high-power consumption and poor selectivity. In this work, we introduce an alternative candidate of cobalt oxysulfide derived from the calcination of self-assembled cobalt sulfide micro-cages. It is found that the majority of S atoms are replaced by O in cobalt oxysulfide, transforming the crystal structure to tetragonal coordination and slightly expanding the optical bandgap energy. The H2 gas sensing performances of cobalt oxysulfide are fully reversible at room temperature, demonstrating peculiar p-type gas responses with a magnitude of 15% for 1% H2 and a high degree of selectivity over CH4, NO2, and CO2. Such excellent performances are possibly ascribed to the physisorption dominating the gas-matter interaction. This work demonstrates the great potentials of transition metal oxysulfide compounds for room-temperature fully reversible gas sensing.
RESUMEN
Heterostructured ZnO/ZnS core/shell nanowire arrays have been successfully fabricated to serve as photoanode for the dye-sensitized solar cells (DSSCs) by a facile two-step approach, combining hydrothermal deposition and liquid-phase chemical conversion process. The morphology evolution of the ZnS coated on the ZnO nanowires and its effect on the performance of the DSSCs were systematically investigated by varying the reaction time during the chemical conversion process. The results show that the compact ZnS shell can effectively promote the photogenerated electrons transfer from the excited dye molecules to the conduction band of the ZnO, simultaneously suppress the recombination for the injected elelctrons from the dye and the redox electrolyte. As reaction time goes by, the surface of the nanowires becomes coarse because of the newly formed ZnS nanoparticles, which will enhance the dye loading, resulting in increment of the short-circuit current density (J(SC)) . Open-circuit photovoltage decay measurements also show that the electron lifetime (τ(n)) in the ZnO/ZnS core/shell nanostructures can be significantly prolonged because of the lower surface trap density in the ZnO after ZnS coating. For the ZnO/ZnS core/shell nanostructures, the J(SC) and η can reach a maximum of 8.38 mA/cm(2) and 1.92% after 6 h conversion time, corresponding to 12- and 16-fold increments of as-synthesized ZnO, respectively.