RESUMEN
Inorganic phosphate (Pi) is a fundamental and essential element for nucleotide biosynthesis, energy supply, and cellular signaling in living organisms. Human phosphate transporter (hPiT) dysfunction causes numerous diseases, but the molecular mechanism underlying transporters remains elusive. We report the structure of the sodium-dependent phosphate transporter from Thermotoga maritima (TmPiT) in complex with sodium and phosphate (TmPiT-Na/Pi) at 2.3-angstrom resolution. We reveal that one phosphate and two sodium ions (Pi-2Na) are located at the core of TmPiT and that the third sodium ion (Nafore) is located near the inner membrane boundary. We propose an elevator-like mechanism for sodium and phosphate transport by TmPiT, with the TmPiT-Na/Pi complex adopting an inward occluded conformation. We found that disease-related hPiT variants carry mutations in the corresponding sodium- and phosphate-binding residues identified in TmPiT. Our three-dimensional structure of TmPiT provides a framework for understanding PiT dysfunction and for future structure-based drug design.
RESUMEN
Solution-processable nonvolatile transistor memory devices on a flexible ITO-PEN substrate are demonstrated using the charge storage dielectrics of poly(methacrylic acid) and graphene oxide (PMAA-GO) composites. The hydrogen bonding interaction effectively disperses GO sheets in the high-k PMAA matrix, leading to the control on the memory characteristics. Besides, the fabricated transistor memory devices have a low operation voltage, a large threshold voltage shift of 5.3-9.4 V, a long retention ability of up to 10(4) s, and good stress endurance of at least 100 cycles.
RESUMEN
Resistance switching memory devices with the configuration of poly(ethylene naphthalate)(PEN)/Al/polyimide (PI) blend/Al are reported. The active layers of the PI blend films were prepared from different compositions of poly[4,4'-diamino-4â³-methyltriphenylamine-hexafluoroisopropylidenediphthalimide] (PI(AMTPA)) and polycyclic aromatic compounds (coronene or N,N-bis[4-(2-octyldodecyloxy)phenyl]-3,4,9,10-perylenetetracarboxylic diimide (PDI-DO)). The additives of large π-conjugated polycyclic compounds can stabilize the charge transfer complex induced by the applied electric field. Thus, the memory device characteristic changes from the volatile to nonvolatile behavior of flash and write-once-read-many times (WORM) as the additive contents increase in both blend systems. The main differences between these two blend systems are the threshold voltage values and the additive content to change the memory behavior. Due to the stronger accepting ability and higher electron affinity of PDI-DO than those of coronene, the PI(AMTPA):PDI-DO blend based memory devices show a smaller threshold voltage and change the memory behavior in a smaller additive content. Besides, the memory devices fabricated on a flexible PEN substrate exhibit an excellent durability upon the bending conditions. These tunable memory performances of the developed PI/polycyclic aromatic compound blends are advantageous for future advanced memory device applications.
