Effect of multiple quantum well periods on structural properties and performance of extended short-wavelength infrared LEDs.

We present research on the role of multiple quantum well periods in extended short-wavelength infrared InGaAs/InAsPSb type-I LEDs. The fabricated LEDs consisted of 6, 15, and 30 quantum well periods, and we evaluated the structural properties and device performance through a combination of theoretical simulations and experimental characterization. The strain and energy band offset was precisely controlled by carefully adjusting the composition of the InAsPSb quaternary material, achieving high valence and conduction band offsets of 350 meV and 94 meV, respectively. Our LEDs demonstrated a high degree of relaxation of 94-96 %. Additionally, we discovered that the temperature-dependent dark current characterization attributed to generation-recombination and trap-assign tunneling, with trap-assign tunneling being more dominant at lower current injections. Electroluminescence analysis revealed that the predominant emission mechanism of the LEDs originated from localized exciton and free exciton radiative recombination, which the 30 quantum wells LED exhibited the highest contribution of the localized exciton/free exciton radiative recombination. We observed that increasing the quantum well periods from 6 to 15 led to an increase in the 300 K electroluminescence intensity of the LED. However, extending the quantum well period to 30 resulted in a decline in emission intensity due to the degradation of the epitaxial film quality.

Improving infra-red polarized imaging efficiency in a bilayer wire-grid polarizer.

The optical, plasmonic, and imaging performance of an infra-red polarized system exceeds that of a conventional infra-red detector due to its high resolution and precision. The wire-grid polarizer has large potential for use in an infra-red polarized imaging device owing to its large polarization efficiency. In this study, we theoretically and experimentally investigate a method to improve the polarization efficiency of a wire-grid polarizer. Here, we demonstrated a high-performance wire grid polarizer with a maximum extinction ratio (ER) of 355 using a bilayer structure and dielectric material in the mid-wavelength infra-red (MWIR) region (3000 nm-5000 nm), which is a 4 times higher ER value than that of the monolayer structure. More interestingly, we were able to improve the performance of the bilayer wire-grid polarizer by devising a method to improve the surface roughness using Ar ion milling. The ER for the after-milled sample was 1255, which was markedly larger than that of the before-milled sample. The results of transmittance measurement confirmed that the improvement in the ER was due to the Fabry-Perot (F-P) phenomenon caused by constructive or destructive interference in the bilayer wire-grid structure and the enhancement of the surface smoothness. These results will help design a polarizer structure that will maximize the polarization efficiency and realize a high-performance infrared polarized imaging system.

Charge density waves and degenerate modes in exfoliated monolayer 2H-TaS2.

Charge density waves spontaneously breaking lattice symmetry through periodic lattice distortion, and electron-electron and electron-phonon inter-actions, can lead to a new type of electronic band structure. Bulk 2H-TaS2 is an archetypal transition metal dichalcogenide supporting charge density waves with a phase transition at 75 K. Here, it is shown that charge density waves can exist in exfoliated monolayer 2H-TaS2 and the transition temperature can reach 140 K, which is much higher than that in the bulk. The degenerate breathing and wiggle modes of 2H-TaS2 originating from the periodic lattice distortion are probed by optical methods. The results open an avenue to investigating charge density wave phases in two-dimensional transition metal dichalcogenides and will be helpful for understanding and designing devices based on charge density waves.

Sub-millimeter size high mobility single crystal MoSe2 monolayers synthesized by NaCl-assisted chemical vapor deposition.

Monolayer MoSe2 is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe2 films in a reliable and scalable manner is still a challenging task as conventional chemical vapor deposition (CVD) or exfoliation based techniques are limited due to the small domains/nanosheet sizes obtained. Here, based on NaCl assisted CVD, we demonstrate the simple and stable synthesis of sub-millimeter size single-crystal MoSe2 monolayers with mobilities ranging from 38 to 8 cm2 V-1 s-1. The average mobility is 12 cm2 V-1 s-1. We further determine that the optical responsivity of monolayer MoSe2 is 42 mA W-1, with an external quantum efficiency of 8.22%.

Photo-enhanced gas sensing of SnS2 with nanoscale defects.

Recently a SnS2 based NO2 gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. Concurrently, SnS2 grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO2 gas sensor based on SnS2 with nanoscale defects by photon illumination, and a detection limit of 2.5 ppb is achieved at room temperature. Using a classical Langmuir model and density functional theory simulations, we show S vacancies work as additional adsorption sites with fast adsorption times, higher adsorption energies, and an order of magnitude higher resistance change compared with pristine SnS2. More interestingly, when electron-hole pairs are excited by photon illumination, the average adsorption time first increases and then decreases with NO2 concentration, while the average desorption time always decreases with NO2 concentration. Our results give a deep understanding of photo-enhanced gas sensing of SnS2 with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials.

A spin torque meter with magnetic facet domains.

Current-induced magnetic domain wall (DW) motion is an important operating principle of spintronic devices. Injected current generates spin torques (STs) on the DWs in two ways. One is the spin transfer from magnetic domains to the walls by the current flowing in the magnet. Current flow in attached heavy metals also generates another ST because of the spin-Hall effect. Both phenomena explain the wall motions well; therefore, their respective contribution is an important issue. Here, we show the simultaneous measurement of both torques by using magnetic facet domains that form mountain-shaped domains with straight walls. When the STs and the external magnetic field push the walls in opposite directions, the walls should have equilibrium angles to create balanced states. Such angles can be modulated by an additional in-plane magnetic field. Angle measurements distinguish the STs because each torque has a distinct mechanism related to the DW structure.

Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene.

Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.

Surface enhanced Raman scattering of monolayer MX2 with metallic nano particles.

Monolayer transition metal dichalcogenides MX2 (M = Mo, W; X = S) exhibit remarkable electronic and optical properties, making them candidates for application within flexible nano-optoelectronics. The ability to achieve a high optical signal, while quantitatively monitoring strain in real-time is the key requirement for applications in flexible sensing and photonics devices. Surface-enhanced Raman scattering (SERS) allows us to achieve both simultaneously. However, the SERS depends crucially on the size and shape of the metallic nanoparticles (NPs), which have a large impact on its detection sensitivity. Here, we investigated the SERS of monolayer MX2, with particular attention paid to the effect of the distribution of the metallic NPs. We show that the SERS depends crucially on the distribution of the metallic NPs and also the phonon mode of the MX2. Moreover, strong coupling between MX2 and metallic NPs, through surface plasmon excitation, results in splitting of the and modes and an additional peak becomes apparent. For a WS2-Ag system the intensity of the additional peak increases exponentially with local strain, which opens another interesting window to quantitatively measure the local strain using SERS. Our experimental study may be useful for the application of monolayer MX2 in flexible nano-optoelectronics.

Skyrmion motion driven by oscillating magnetic field.

The one-dimensional magnetic skyrmion motion induced by an electric current has attracted much interest because of its application potential in next-generation magnetic memory devices. Recently, the unidirectional motion of large (20 µm in diameter) magnetic bubbles with two-dimensional skyrmion topology, driven by an oscillating magnetic field, has also been demonstrated. For application in high-density memory devices, it is preferable to reduce the size of skyrmion. Here we show by numerical simulation that a skyrmion of a few tens of nanometres can also be driven by high-frequency field oscillations, but with a different direction of motion from the in-plane component of the tilted oscillating field. We found that a high-frequency field for small skyrmions can excite skyrmion resonant modes and that a combination of different modes results in a final skyrmion motion with a helical trajectory. Because this helical motion depends on the frequency of the field, we can control both the speed and the direction of the skyrmion motion, which is a distinguishable characteristic compared with other methods.

Magnetic bubblecade memory based on chiral domain walls.

Unidirectional motion of magnetic domain walls is the key concept underlying next-generation domain-wall-mediated memory and logic devices. Such motion has been achieved either by injecting large electric currents into nanowires or by employing domain-wall tension induced by sophisticated structural modulation. Herein, we demonstrate a new scheme without any current injection or structural modulation. This scheme utilizes the recently discovered chiral domain walls, which exhibit asymmetry in their speed with respect to magnetic fields. Because of this asymmetry, an alternating magnetic field results in the coherent motion of the domain walls in one direction. Such coherent unidirectional motion is achieved even for an array of magnetic bubble domains, enabling the design of a new device prototype-magnetic bubblecade memory-with two-dimensional data-storage capability.

Duffing oscillation-induced reversal of magnetic vortex core by a resonant perpendicular magnetic field.

Nonlinear dynamics of the magnetic vortex state in a circular nanodisk was studied under a perpendicular alternating magnetic field that excites the radial modes of the magnetic resonance. Here, we show that as the oscillating frequency is swept down from a frequency higher than the eigenfrequency, the amplitude of the radial mode is almost doubled to the amplitude at the fixed resonance frequency. This amplitude has a hysteresis vs. frequency sweeping direction. Our result showed that this phenomenon was due to a Duffing-type nonlinear resonance. Consequently, the amplitude enhancement reduced the vortex core-switching magnetic field to well below 10 mT. A theoretical model corresponding to the Duffing oscillator was developed from the Landau-Lifshitz-Gilbert equation to explore the physical origin of the simulation result. This work provides a new pathway for the switching of the magnetic vortex core polarity in future magnetic storage devices.

LiNi0.4Co0.3Mn0.3O2 thin film electrode by aerosol deposition.

LiNi0.4Co0.3Mn0.3O2 thin film electrodes are fabricated from LiNi0.4Co0.3Mn0.3O2 raw powder at room temperature without pretreatments using aerosol deposition that is much faster and easier than conventional methods such as vaporization, pulsed laser deposition, and sputtering. The LiNi0.4Co0.3Mn0.3O2 thin film is composed of fine grains maintaining the crystal structure of the LiNi0.4Co0.3Mn0.3O2 raw powder. In the cyclic voltammogram, the LiNi0.4Co0.3Mn0.3O2 thin film electrode shows a 3.9-V anodic peak and a 3.6-V cathodic peak. The initial discharge capacity is 44.6 µAh/cm2, and reversible behavior is observed in charge-discharge profiles. Based on the results, the aerosol deposition method is believed to be a potential candidate for the fabrication of thin film electrodes.