RESUMEN
We construct the Barut-Girardello coherent states for charge carriers in anisotropic 2D-Dirac materials immersed in a constant homogeneous magnetic field which is orthogonal to the sample surface. For that purpose, we solve the anisotropic Dirac equation and identify the appropriate arising and lowering operators. Working in a Landau-like gauge, we explicitly construct nonlinear coherent states as eigenstates of a generalized annihilation operator with complex eigenvalues which depends on an arbitrary function fâ of the number operator. In order to describe the anisotropy effects on these states, we obtain the Heisenberg uncertainty relation, the probability density, mean energy value and occupation number distribution for three different functions fâ. For the case in which the anisotropy is caused by uniaxial strain, we obtain that when the stress is applied along the x-axis of the material surface, the probability density for the nonlinear coherent states is smaller compared to when the material is stressed along the orthogonal axis.