High-Yield Production of High-κ/Metal Gate Nanopattern Array for 2D Devices via Oxidation-Assisted Etching Approach.

2D materials with atomically thin nature are promising to develop scaled transistors and enable the extreme miniaturization of electronic components. However, batch manufacturing of top-gate 2D transistors remains a challenge since gate dielectrics or gate electrodes transferred from 2D material easily peel away as gate pitch decreases to the nanometer scale during lift-off processes. In this study, an oxidation-assisted etching technique is developed for batch manufacturing of nanopatterned high-κ/metal gate (HKMG) stacks on 2D materials. This strategy produces nano-pitch self-oxidized Al2O3/Al patterns with a resolution of 150 nm on 2D channel material, including graphene, MoS2, and WS2 without introducing any additional damage. Through a gate-first technology in which the Al2O3/Al gate stacks are used as a mask for the formation of source and drain, a short-channel HKMG MoS2 transistor with a nearly ideal subthreshold swing (SS) of 61 mV dec-1, and HKMG graphene transistor with a cut-off frequency of 150 GHz are achieved. Moreover, both graphene and MoS2 HKMG transistor arrays exhibit high uniformity. The study may bring the potential for the massive production of large-scale integrated circuits using 2D materials.

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors.

Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors1-4. However, owing to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties3,5,6. Here we demonstrate the fabrication of atomically thin single-crystalline Al2O3 (c-Al2O3) as a high-quality top-gate dielectric in 2D FETs. By using intercalative oxidation techniques, a stable, stoichiometric and atomically thin c-Al2O3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface at room temperature. Owing to the favourable crystalline structure and well-defined interfaces, the gate leakage current, interface state density and dielectric strength of c-Al2O3 meet the International Roadmap for Devices and Systems requirements3,5,7. Through a one-step transfer process consisting of the source, drain, dielectric materials and gate, we achieve top-gate MoS2 FETs characterized by a steep subthreshold swing of 61 mV dec-1, high on/off current ratio of 108 and very small hysteresis of 10 mV. This technique and material demonstrate the possibility of producing high-quality single-crystalline oxides suitable for integration into fully scalable advanced 2D FETs, including negative capacitance transistors and spin transistors.

CMOS-compatible reconstructive spectrometers with self-referencing integrated Fabry-Perot resonators.

Miniaturized reconstructive spectrometers play a pivotal role in on-chip and portable devices, offering high-resolution spectral measurement through precalibrated spectral responses and AI-driven reconstruction. However, two key challenges persist for practical applications: artificial intervention in algorithm parameters and compatibility with complementary metal-oxide-semiconductor (CMOS) manufacturing. We present a cutting-edge miniaturized reconstructive spectrometer that incorporates a self-adaptive algorithm referenced with Fabry-Perot resonators, delivering precise spectral tests across the visible range. The spectrometers are fabricated with CMOS technology at the wafer scale, achieving a resolution of ~2.5 nm, an average wavelength deviation of ~0.27 nm, and a resolution-to-bandwidth ratio of ~0.46%. Our approach provides a path toward versatile and robust reconstructive miniaturized spectrometers and facilitates their commercialization.

Realization of Honeycomb Tellurene with Topological Edge States.

The two-dimensional (2D) honeycomb lattice has attracted intensive research interest due to the appearance of Dirac-type band structures as the consequence of two sublattices in the honeycomb structure. Introducing strong spin-orbit coupling (SOC) leads to a gap opening at the Dirac point, transforming the honeycomb lattice into a 2D topological insulator as a platform for the quantum spin Hall effect (QSHE). In this work, we realize a 2D honeycomb-structured film with tellurium, the heaviest nonradioactive element in Group VI, namely, tellurene, via molecular beam epitaxy. We revealed the gap opening of 160 meV at the Dirac point due to the strong SOC in the honeycomb-structured tellurene by angle-resolved photoemission spectroscopy. The topological edge states of tellurene are detected via scanning tunneling microscopy/spectroscopy. These results demonstrate that tellurene is a novel 2D honeycomb lattice with strong SOC, and they unambiguously prove that tellurene is a promising candidate for a room-temperature QSHE system.

Field-Effect Thermoelectric Hotspot in Monolayer Graphene Transistor.

Graphene is a promising candidate for the thermal management of downscaled microelectronic devices owing to its exceptional electrical and thermal properties. Nevertheless, a comprehensive understanding of the intricate electrical and thermal interconversions at a nanoscale, particularly in field-effect transistors with prevalent gate operations, remains elusive. In this study, nanothermometric imaging is used to examine a current-carrying monolayer graphene channel sandwiched between hexagonal boron nitride dielectrics. It is revealed for the first time that beyond the expected Joule heating, the thermoelectric Peltier effect actively plays a significant role in generating hotspots beneath the gated region. With gate-controlled charge redistribution and a shift in the Dirac point position, an unprecedented systematic evolution of thermoelectric hotspots, underscoring their remarkable tenability is demonstrated. This study reveals the field-effect Peltier contribution in a single graphene-material channel of transistors, offering valuable insights into field-effect thermoelectrics and future on-chip energy management.

Quantum Griffiths Singularity in Ordered Artificial Superconducting-Islands-Array on Graphene.

Quantum Griffiths phase (QGP) is a novel quantum phenomenon of quantum phase transition in two-dimensional (2D) superconductors, and the emergence of inhomogeneous superconducting rare regions immersed in a metallic matrix is theoretically related to the quantum Griffiths singularity (QGS). However, the theoretical proposal of superconducting rare regions still lacks intuitive experimental verification. Here, we construct an artificial ordered superconducting-islands-array on monolayer graphene with the aid of an anodic aluminum oxide (AAO) membrane. The QGS under both in-plane and out-of-plane magnetic fields is evidenced by the divergent dynamical critical exponent and is in compliance with the direct activated scaling behavior. The phase diagram clearly shows that the QGP is indeed bred in the rare superconducting regions within isolated superconducting islands with a vanished quantum coherence. Our results reveal the universal features of QGP in artificial heterostructured systems and provide a visualized platform for the theoretical proposal of QGS.

Flexible solar cells based on foldable silicon wafers with blunted edges.

Flexible solar cells have a lot of market potential for application in photovoltaics integrated into buildings and wearable electronics because they are lightweight, shockproof and self-powered. Silicon solar cells have been successfully used in large power plants. However, despite the efforts made for more than 50 years, there has been no notable progress in the development of flexible silicon solar cells because of their rigidity1-4. Here we provide a strategy for fabricating large-scale, foldable silicon wafers and manufacturing flexible solar cells. A textured crystalline silicon wafer always starts to crack at the sharp channels between surface pyramids in the marginal region of the wafer. This fact enabled us to improve the flexibility of silicon wafers by blunting the pyramidal structure in the marginal regions. This edge-blunting technique enables commercial production of large-scale (>240 cm2), high-efficiency (>24%) silicon solar cells that can be rolled similarly to a sheet of paper. The cells retain 100% of their power conversion efficiency after 1,000 side-to-side bending cycles. After being assembled into large (>10,000 cm2) flexible modules, these cells retain 99.62% of their power after thermal cycling between -70 °C and 85 °C for 120 h. Furthermore, they retain 96.03% of their power after 20 min of exposure to air flow when attached to a soft gasbag, which models wind blowing during a violent storm.

Self-rolling of vanadium dioxide nanomembranes for enhanced multi-level solar modulation.

Thermochromic window develops as a competitive solution for carbon emissions due to comprehensive advantages of its passivity and effective utilization of energy. How to further enhance the solar modulation ([Formula: see text]) of thermochromic windows while ensuring high luminous transmittance ([Formula: see text]) becomes the latest challenge to touch the limit of energy efficiency. Here, we show a smart window combining mechanochromism with thermochromism by self-rolling of vanadium dioxide (VO2) nanomembranes to enhance multi-level solar modulation. The mechanochromism is introduced by the temperature-controlled regulation of curvature of rolled-up smart window, which benefits from effective strain adjustment in VO2 nanomembranes upon the phase transition. Under geometry design and optimization, the rolled-up smart window with high [Formula: see text] and [Formula: see text] is achieved for the modulation of indoor temperature self-adapted to seasons and climate. Furthermore, such rolled-up smart window enables high infrared reflectance after triggered phase transition and acts as a smart lens protective cover for strong radiation. This work supports the feasibility of self-rolling technology in smart windows and lens protection, which promises broad interest and practical applications of self-adapting devices and systems for smart building, intelligent sensors and actuators with the perspective of energy efficiency.

Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge.

The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.

High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer.

The metal/germanium (Ge) photodetectors have attracted much attention for their potential applications in on-chip optoelectronics. One critical issue is the relatively large dark current due to the limited Schottky potential barrier height of the metal/germanium junction, which is mainly caused by the small bandgap of Ge and the Fermi energy level pinning effect between the metal and Ge. The main technique to solve this problem is to insert a thin interlayer between the metal and Ge. However, so far, the dark current of the photodetectors is still large when using a bulk-material insertion layer, while when using a two-dimensional insertion layer, the area of the insertion layer is too small to support a mass production. Here, we report a gold/graphene/germanium photodetector with a wafer-scale graphene insertion layer using a 4 inch graphene-on-germanium wafer. The insertion layer significantly increases the potential barrier height, leading to a dark current as low as 1.6 mA cm-2, and a responsivity of 1.82 A W-1which are the best results for metal/Ge photodetectors reported so far. Our work contributes to the mass production of high-performance metal/Ge photodetectors.

2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics.

Piezoelectricity in 2D transition metal dichalcogenides (TMDs) has attracted considerable interest because of their excellent flexibility and high piezoelectric coefficient compared to conventional piezoelectric bulk materials. However, the ability to regulate the piezoelectric properties is limited because the entropy is constant for certain binary TMDs other than multielement ones. Herein, in order to increase the entropy, a ternary TMDs alloy, Mo1- x Wx S2 , with different W concentrations, is synthesized. The W concentration in the Mo1- x Wx S2 alloy can be controlled precisely in the low-supersaturation synthesis and the entropy can be tuned accordingly. The Mo0.46 W0.54 S2 alloy (x = 0.54) has the highest configurational entropy and best piezoelectric properties, such as a piezoelectric coefficient of 4.22 pm V-1 and a piezoelectric output current of 150 pA at 0.24% strain. More importantly, it can be combined into a larger package to increase the output current to 600 pA to cater to self-powered applications. Combining with excellent mechanical durability, a mechanical sensor based on the Mo0.46 W0.54 S2 alloy is demonstrated for real-time health monitoring.

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors.

Direct atomic-scale observation of the local phase transition in transition metal dichalcogenides (TMDCs) is critically required to carry out in-depth studies of their atomic structures and electronic features. However, the structural aspects including crystal symmetries tend to be unclear and unintuitive in real-time monitoring of the phase transition process. Herein, by using in situ transmission electron microscopy, information about the phase transition mechanism of MoTe2 from hexagonal structure (2H phase) to monoclinic structure (1T' phase) driven by sublimation of Te atoms after a spike annealing is obtained directly. Furthermore, with the control of Te atom sublimation by modulating the hexagonal boron nitride (h-BN) coverage in the desired area, the lateral 1T'-enriched MoTe2 /2H MoTe2 homojunction can be one-step constructed via an annealing treatment. Owing to the gradient bandgap provided by 1T'-enriched MoTe2 and 2H MoTe2 , the photodetector composed of the 1T'-enriched MoTe2 /2H MoTe2 homojunction shows fast photoresponse and ten times larger photocurrents than that consisting of a pure 2H MoTe2 channel. The study reveals a route to improve the performance of optoelectronic and electronic devices based on TMDCs with both semiconducting and semimetallic phases.

Self-Rolling of Monolayer Graphene for Ultrasensitive Molecular Sensing.

The controllable manipulation of graphene to create three-dimensional (3D) structures is an intriguing approach for favorably tuning its properties and creating new types of 3D devices. However, due to extremely low bending stiffnesses, it is rather challenging to construct monolayer graphene into stable 3D structures. Here, we demonstrate the stable formation of monolayer graphene microtubes with accompanying pre-patterned strain layers. The diameter of graphene microtubes can be effectively tuned by changing the thickness of the strain layers. Benefiting from a high surface-to-volume ratio of the tubular geometry, the 3D geometry leads to a prominent Raman enhancement, which was further applied to molecular sensing. The R6G molecules on graphene microtubes can be detected even for a concentration as low as 10-11 M. We believe that this method can be a generalized way to realize the 3D tubular structure of other 2D materials.

Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning.

Triggered by the pioneering research on graphene, the family of two-dimensional layered materials (2DLMs) has been investigated for more than a decade, and appealing functionalities have been demonstrated. However, there are still challenges inhibiting high-quality growth and circuit-level integration, and results from previous studies are still far from complying with industrial standards. Here, we overcome these challenges by utilizing machine-learning (ML) algorithms to evaluate key process parameters that impact the electrical characteristics of MoS2 top-gated field-effect transistors (FETs). The wafer-scale fabrication processes are then guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing. A 62-level SPICE modeling was implemented for MoS2 FETs and further used to construct functional digital, analog, and photodetection circuits. Finally, we present wafer-scale test FET arrays and a 4-bit full adder employing industry-standard design flows and processes. Taken together, these results experimentally validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials.

Graphene-mediated ferromagnetic coupling in the nickel nano-islands/graphene hybrid.

Nanoscale magnetic structures are fundamental to the design and fabrication of spintronic devices and have exhibited tremendous potential superior to the conventional semiconductor devices. However, most of the magnetic moments in nanostructures are unstable due to size effect, and the possible solution based on exchange coupling between nanomagnetism is still not clear. Here, graphene-mediated exchange coupling between nanomagnets is demonstrated by depositing discrete superparamagnetic Ni nano-islands on single-crystal graphene. The heterostructure exhibits ideal two-dimensional (2D) ferromagnetism with clear hysteresis loops and Curie temperature up to 80 K. The intrinsic ferromagnetism in graphene and antiferromagnetic exchange coupling between graphene and Ni nano-islands are revealed by x-ray magnetic circular dichroism and density functional theory calculations. The artificial 2D ferromagnets constitute a platform to study the coupling mechanism between complex correlated electronic systems and magnetism on the nanoscale, and the results and concept provide insights into the realization of spin manipulation in quantum computing.

Gaussian-preserved, non-volatile shape morphing in three-dimensional microstructures for dual-functional electronic devices.

Motile plant structures such as Mimosa pudica leaves, Impatiens glandulifera seedpods, and Dionaea muscipula leaves exhibit fast nastic movements in a few seconds or less. This motion is stimuli-independent mechanical movement following theorema egregium rules. Artificial analogs of tropistic motion in plants are exemplified by shape-morphing systems, which are characterized by high functional robustness and resilience for creating 3D structures. However, all shape-morphing systems developed so far rely exclusively on continuous external stimuli and result in slow response. Here, we report a Gaussian-preserved shape-morphing system to realize ultrafast shape morphing and non-volatile reconfiguration. Relying on the Gaussian-preserved rules, the transformation can be triggered by mechanical or thermal stimuli within a microsecond. Moreover, as localized energy minima are encountered during shape morphing, non-volatile configuration is preserved by geometrically enhanced rigidity. Using this system, we demonstrate a suite of electronic devices that are reconfigurable, and therefore, expand functional diversification.

Disorder-Induced Quantum Griffiths Singularity Revealed in an Artificial 2D Superconducting System.

Disorder-induced Griffiths singularity of quantum phase transition (QPT) is a crucial issue in 2D superconductors (2DSC). In a superconducting system, the strength of disorder is found to be associated with the vortex pinning energy, which is closely related to the quantum Griffiths singularity; however, a direct study to elucidate the role of vortex pinning energy on the quantum Griffiths singularity in 2DSC remains to be undertaken. Here, an artificial 2DSC system is designed by randomly depositing superconducting nanoislands on 2Delectron gas (2DEG). Quantum Griffiths singularity is present in a graphene/Pb-islands-array hybrid, where the superconducting behavior transits to weakly localized metallic behavior induced by the vertical magnetic field and exhibits critical behavior with a diverging dynamical critical exponent approaching zero temperature. Compared to the study of graphene/Sn-islands-array hybrid where the sharp QPT is observed, the vortex pinning energy acquired from the Arrhenius plot analysis is greater in graphene/Pb-islands-array hybrid, which may contribute to the presence of the quantum Griffiths singularity. This work may provide a comprehensive interpretation of the QPT in 2DSC.

Silicon nanomembrane phototransistor flipped with multifunctional sensors toward smart digital dust.

The sensing module that converts physical or chemical stimuli into electrical signals is the core of future smart electronics in the post-Moore era. Challenges lie in the realization and integration of different detecting functions on a single chip. We propose a new design of on-chip construction for low-power consumption sensor, which is based on the optoelectronic detection mechanism with external stimuli and compatible with CMOS technology. A combination of flipped silicon nanomembrane phototransistors and stimuli-responsive materials presents low-power consumption (CMOS level) and demonstrates great functional expansibility of sensing targets, e.g., hydrogen concentration and relative humidity. With a device-first, wafer-compatible process introduced for large-scale silicon flexible electronics, our work shows great potential in the development of flexible and integrated smart sensing systems for the realization of Internet of Things applications.

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector.

GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with an extended cutoff wavelength. However, the traditional GeSn/Ge heterostructure usually consists of defects like misfit dislocations due to the lattice mismatch issue. The defects with the large feature size of a photodetector fabricated on bulk GeSn/Ge heterostructures induce a considerable dark current. Here, we demonstrate a flexible GeSn/Ge dual-nanowire (NW) structure, in which the strain relaxation is achieved by the elastic deformation without introducing defects, and the feature dimension is naturally at the nanoscale. A photodetector with a low dark current can be built on a GeSn/Ge dual-NW, which exhibits an extended detection wavelength beyond 2 µm and enhanced responsivity compared to the Ge NW. Moreover, the dark current can be further suppressed by the depletion effect from the ferroelectric polymer side gate. Our work suggests the flexible GeSn/Ge dual-NW may open an avenue for Si-compatible optoelectronic circuits operating in the short-wavelength infrared range.

Phase-Controlled Synthesis of Monolayer W1- x Rex S2 Alloy with Improved Photoresponse Performance.

Tuning bandgap and phases in the ternary 2D transition metal dichalcogenides (TMDs) alloys has opened up unexpected opportunities to engineer optoelectronic properties and explore potential applications. In this work, a salt-assisted chemical deposition vapor (CVD) growth strategy is reported for the creation of high-quality monolayer W1- x Rex S2 alloys to fulfill a readily phase control from 1H to DT by changing the ratio of Re and W precursors. The structures and chemical compositions of doping alloys are confirmed by combining atomic resolution scanning transmission electron microscopy-annular dark field imaging with energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy, matching well with the calculated results. The field-effect transistors (FETs) devices fabricated based on 1H-W0.9 Re0.1 S2 monolayer exhibit a n-type semiconducting behavior with the mobility of 0.4 cm2 V-1 s-1 . More importantly, the FETs show high-performance responsivity with a value of 17 µA W-1 in air, which is superior to that of monolayer CVD-grown WS2 . This work paves the way toward synthesizing monolayer ternary alloys with controlled phases for potential optoelectronic applications.