RESUMEN
This study reports a strong ME effect in thin-film composites consisting of nickel, iron, or cobalt foils and 550 nm thick AlN films grown by PE-ALD at a (low) temperature of 250 °C and ensuring isotropic and highly conformal coating profiles. The AlN film quality and the interface between the film and the foils are meticulously investigated by means of high-resolution transmission electron microscopy and the adhesion test. An interface (transition) layer of partially amorphous AlxOy/AlOxNy with thicknesses of 10 and 20 nm, corresponding to the films grown on Ni, Fe, and Co foils, is revealed. The AlN film is found to be composed of a mixture of amorphous and nanocrystalline grains at the interface. However, its crystallinity is improved as the film grew and shows a highly preferred (002) orientation. High self-biased ME coefficients (αME at a zero-bias magnetic field) of 3.3, 2.7, and 3.1 V·cm-1·Oe-1 are achieved at an off-resonance frequency of 46 Hz in AlN/Ni thin-film composites with different Ni foil thicknesses of 7.5, 15, and 30 µm, respectively. In addition, magnetoelectric measurements have also been carried out in composites made of 550 nm thick films grown on 12.5 µm thick Fe and 15 µm thick Co foils. The maximum magnetoelectric coefficients of AlN/Fe and AlN/Co composites are 0.32 and 0.12 V·cm-1·Oe-1, measured at 46 Hz at a bias magnetic field (Hdc) of 6 and 200 Oe, respectively. The difference of magnetoelectric transducing responses of each composite is discussed according to interface analysis. We report a maximum delivered power density of 75 nW/cm3 for the AlN/Ni composite with a load resistance of 200 kΩ to address potential energy harvesting and electromagnetic sensor applications.
RESUMEN
Thin film semiconductors grown using chemical bath methods produce large amounts of waste solvent and chemicals that then require costly waste processing. We replace the toxic chemical bath deposited CdS buffer layer from our Cu(In,Ga)(S,Se)2 (CIGS)-based solar cells with a benign inkjet-printed and annealed Zn(O,S) layer using 230â¯000 times less solvent and 64â¯000 times less chemicals. The wetting and final thickness of the Zn(O,S) layer on the CIGS is controlled by a UV ozone treatment and the drop spacing, whereas the annealing temperature and atmosphere determine the final chemical composition and band gap. The best solar cell using a Zn(O,S) air-annealed layer had an efficiency of 11%, which is similar to the best conventional CdS buffer layer device fabricated in the same batch. Improving the Zn(O,S) wetting and annealing conditions resulted in the best device efficiency of 13.5%, showing the potential of this method.
RESUMEN
The mechanical, structural, electronic and magnetic properties of carbon nanotubes can be modified by electron or ion irradiation. In this work we used 25 keV He+ and Ne+ ion irradiation to study the influence of fluence and sample thickness on the irradiation-induced damage of multiwalled carbon nanotubes (MWCNTs). The irradiated areas have been characterised by correlative Raman spectroscopy and TEM imaging. In order to preclude the Raman contribution coming from the amorphous carbon support of typical TEM grids, a new methodology involving Raman inactive Au TEM grids was developed. The experimental results have been compared to SDTRIMSP simulations. Due to the small thickness of the MWCNTs, sputtering has been observed for the top and bottom side of the samples. Depending on thickness and ion species, the sputter yield is significantly higher for the bottom than the top side. For He+ and Ne+ irradiation, damage formation evolves differently, with a change in the trend of the ratio of D to G peak in the Raman spectra being observed for He+ but not for Ne+. This can be attributed to differences in stopping power and sputter behaviour.
RESUMEN
Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se2 and Cu(In,Ga)3Se5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.
RESUMEN
Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas-phase alkali transport in the kesterite sulfide (Cu2ZnSnS4) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source.
RESUMEN
Environmental heavy metal contamination is a case of concern for both animal and human health. Studying the fate of metals in plant or animal tissues may provide information on pollution. In the present study, we investigated the possibility to follow the biological fate of chromium and platinum uptake in common garden snails (Helix aspersa), typically accumulating high concentrations of metals from their environment. Chromium and platinum were administered orally to snails in 5 groups (n=25/group): control, food contaminated by ca. 2.5 µg g(-1) and 19 µg g(-1) chromium and 2.5 µg g(-1) and 25 µg g(-1) platinum, for 8 weeks. Following exposure, surviving snails were sacrificed, shell and remaining tissue investigated by ICP-MS, and shell, midgut gland and mantle by nano-secondary ion mass-spectrometry (Nano-SIMS). (12)C(14)N-normalized platinum and (40)Ca-normalized chromium measurements indicated highest enrichments in cellular vesicles of the midgut gland, and lower concentrations in mantle and shell, with significantly higher platinum and chromium concentrations in the 2 exposure groups vs. control (P<0.05), with somewhat differing distribution patterns for chromium and platinum. Comparable results were obtained by ICP-MS, with both chromium and platinum fed snails showing drastically elevated concentrations of metals in shell (up to 78 and 122 µg g(-1) dw platinum and chromium, respectively) and in other tissues (up to 200 and 1125 µg g(-1) dw platinum and chromium, respectively). Nano-SIMS allowed for semi-quantitative comparison of metal fate in snail tissues, making this an interesting technique for future studies in the area of environmental pollution.