We present the studies of structural, transport and magnetotransport properties of [Formula: see text]Cd x GeAs2 crystals with the chemical content changing from 0 to 1. The structural studies indicate that this alloy exists as a composite two-phase material in almost the entire range of average chemical compositions. The two phase nature of our samples does have a significant influence on the carrier transport and magnetotransport of the composite alloy. The change of the conductivity type is observed at room temperature, from p-type for [Formula: see text] to n-type for x > 0.18, respectively. The Hall carrier mobility measured at room temperature decreases as a function of x from about 35 cm2 (V · s)-1 for the sample with x = 0 down to 3 cm2 (V · s)-1 for the sample with x = 0.233. For x > 0.233 the Hall carrier mobility shows an increase with x, up to the highest value around 875 cm2 (V · s)-1 observed for the sample with x = 1. Temperature dependent resistivity measurements indicate the presence of thermal activation of carriers with activation energy, E a, with values from 20 to 30 meV for all the studied samples. The temperature dependent Hall effect data show that the grain boundary limited transport is strong in all our samples. For the samples with [Formula: see text] the negative MR is observed at temperatures lower than 100 K and at low magnetic field values, [Formula: see text] T. This effect is interpreted as a weak localization phenomenon with low values of phase coherence length, [Formula: see text] nm.
We present studies of structural, magnetic, and electrical properties of Zn1-x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors with the average Mn-content, [Formula: see text], changing from 0.027 up to 0.138. The magnetic force microscope imaging done at room temperature shows the presence of a strong signal coming from MnSb clusters. Magnetic properties show the paramagnet-ferromagnet transition with the Curie temperature, T C, equal to about 522 K and the cluster-glass behavior with the transition temperature, T CG, equal to about 465 K, both related to MnSb clusters. The magnetotransport studies show that all investigated samples are p-type semiconductors with high hole concentration, p, changing from 10(21) to 10(22) cm(-3). A large increase in the resistivity as a function of the magnetic field is observed at T < 10 K and small magnetic fields, [Formula: see text] mT, for all the studied samples with a maximum amplitude of the magnetoresistance about 460% at T = 1.4 K. The large increase in the resistivity is most probably caused by the appearance of the superconducting state in the samples at T < 4.3 K.
